全文获取类型
收费全文 | 64篇 |
免费 | 2篇 |
国内免费 | 4篇 |
专业分类
化学 | 14篇 |
力学 | 1篇 |
数学 | 25篇 |
物理学 | 30篇 |
出版年
2021年 | 1篇 |
2017年 | 1篇 |
2016年 | 1篇 |
2015年 | 1篇 |
2014年 | 1篇 |
2013年 | 3篇 |
2012年 | 3篇 |
2011年 | 3篇 |
2010年 | 1篇 |
2009年 | 2篇 |
2008年 | 3篇 |
2007年 | 1篇 |
2006年 | 3篇 |
2005年 | 2篇 |
2004年 | 2篇 |
2003年 | 1篇 |
2002年 | 5篇 |
2001年 | 1篇 |
2000年 | 1篇 |
1998年 | 3篇 |
1996年 | 2篇 |
1994年 | 2篇 |
1993年 | 5篇 |
1992年 | 1篇 |
1991年 | 1篇 |
1989年 | 1篇 |
1988年 | 2篇 |
1987年 | 1篇 |
1986年 | 1篇 |
1985年 | 1篇 |
1983年 | 1篇 |
1981年 | 1篇 |
1980年 | 4篇 |
1979年 | 1篇 |
1978年 | 1篇 |
1976年 | 1篇 |
1975年 | 1篇 |
1973年 | 2篇 |
1971年 | 1篇 |
1954年 | 1篇 |
排序方式: 共有70条查询结果,搜索用时 31 毫秒
1.
5‐Amino‐4‐methyl‐2‐phenyl‐6‐substitutedfuro[2,3‐d]pyrimidines ( 2a‐c ) were reacted with 2,5‐dimethoxytetrahydrfuran to afford the pyrrolyl derivatives 3a‐c . Compound 3a was chosen as intermediate for the synthesis of poly fused heterocycles incorporated furopyrimidines moiety 4–11 . Some of the synthesized compounds were screened for their antibacterial and antifungal activities. 相似文献
2.
3.
Braverman Michael SH.; Stepanov Vladimir D. 《Bulletin London Mathematical Society》1994,26(3):283-287
Necessary and sufficient conditions for the boundedness of thediscrete Hardy operator of the form , from to when 0 < q < 1 <p , is given. 相似文献
4.
5.
T. W. Dawson J. F. Feinstein 《Proceedings of the American Mathematical Society》2003,131(9):2831-2839
We examine the condition that a complex Banach algebra has dense invertible group. We show that, for commutative algebras, this property is preserved by integral extensions. We also investigate the connections with an old problem in the theory of uniform algebras.
6.
A.SH. Hussein Z. Hassan S.M. Thahab Abu Hassan M.A. Abid C.W. Chin 《Physica B: Condensed Matter》2011,406(6-7):1267-1271
We have studied the structural properties of undoped and Si-doped AlxGa1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the AlxGa1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A1(LO) and E2(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (ΦB) of undoped and Si-doped AlxGa1?xN samples was found to be 0.86 and 0.74 eV, respectively. 相似文献
7.
Metal/superconductor/semiconductor (Ag/Hg-1212/CdSe) hetero-nanostructures have been fabricated using pulse-electrodeposition
technique and are characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy
(SEM) studies. The junction capacitance of Ag/Hg-1212, Hg-1212/CdSe and Ag/Hg-1212/CdSe heterojunctions is measured in dark
and under laser irradiation at room temperature. The nature of the junction formed and built-in-junction potentials were determined.
The increase in carrier concentration across the junction due to photo-irradiation has been observed. 相似文献
8.
One of the innovative technological directions for the high-temperature superconductors has been persued by fabricating the
heteroepitaxial multilayer structures such as superconductor-semiconductor heterostructures. In the present investigation,
metal/superconductor/semiconductor (Ag/Tl-2223/CdSe) hetero-nanostructures have successfully been fabricated using dc electrodeposition
technique and were characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy
(SEM) studies. The measurement of junction capacitance as a function of biasing voltage was used for the estimation of junction
built-in-potential (V
D) and to study the charge distribution in a heterojunction. The Mott-Schottky plots were measured for each junction in dark
and under the photo-irradiation. The effect of laser irradiation on C-V characteristics of hetero-nanostructure has been studied. 相似文献
9.
Hideo Ichimura David Feinstein Richard F Schwartz 《Journal of Mathematical Analysis and Applications》1980,76(1):270-282
Expressions are given for analytical extraction of parameters for polynomial and single relaxation experiments, and an indication is given of the application of the technique to multiple relaxation experiments. Examples are given for the cases of single and double relaxations. Hypothetical reference is made to time domain reflectometry. 相似文献
10.