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1.
5‐Amino‐4‐methyl‐2‐phenyl‐6‐substitutedfuro[2,3‐d]pyrimidines ( 2a‐c ) were reacted with 2,5‐dimethoxytetrahydrfuran to afford the pyrrolyl derivatives 3a‐c . Compound 3a was chosen as intermediate for the synthesis of poly fused heterocycles incorporated furopyrimidines moiety 4–11 . Some of the synthesized compounds were screened for their antibacterial and antifungal activities. 相似文献
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Numerical simulation aspects, related to low Reynolds number free boundary viscous flows at micro and mesolevel during the resin impregnation stage of the liquid composite moulding process (LCM), are presented in this article. A free boundary program (FBP), developed by the authors, is used to track the movement of the resin front accurately by accounting for the surface tension effects at the boundary. Issues related to the global and local mass conservation (GMC and LMC) are identified and discussed. Unsuitable conditions for LMC and consequently GMC are uncovered at low capillary numbers, and hence a strategy for the numerical simulation of such flows is suggested. FBP encompasses a set of subroutines that are linked to modules in ANSYS. FBP can capture the void formation dynamics based on the analysis developed. We present resin impregnation dynamics in two dimensions. Extension to three dimensions is a subject for further research. Several examples are shown and efficiency of different stabilization techniques are compared. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
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Braverman Michael SH.; Stepanov Vladimir D. 《Bulletin London Mathematical Society》1994,26(3):283-287
Necessary and sufficient conditions for the boundedness of thediscrete Hardy operator of the form , from to when 0 < q < 1 <p , is given. 相似文献
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Andr Bnard Suresh G. Advani Jerold M. Schultz 《Journal of Polymer Science.Polymer Physics》1996,34(3):471-483
Solidification of semicrystalline materials often occurs in significantly undercooled melts. The crystal growth process in such melts is convoluted due to the fact that the interface between the solid and liquid domains of the microscopic crystals is at an unknown temperature. However, it is possible to let the temperature of this interface be unspecified and solve the problem with a semianalytical method if the growth velocity is prescribed. Solutions for the temperature profiles in both solid and liquid phases are presented in this work, along with the interface temperature, for phase change processes controlled by the kinetics of crystallization rather than diffusion processes, which is typical for polymers. The method is used for one-dimensional problems in cartesian, cylindrical, and spherical geometries that correspond to commonly found microstructures. It is found that the temperature of the interface is significantly below the equilibrium melting point and a quasi steady-state regime is reached rapidly. Comparison with the classical Neumann's solution shows that the temperature profiles are similar but the position of the interface differs considerably. © 1996 John Wiley & Sons, Inc. 相似文献
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A.SH. Hussein Z. Hassan S.M. Thahab Abu Hassan M.A. Abid C.W. Chin 《Physica B: Condensed Matter》2011,406(6-7):1267-1271
We have studied the structural properties of undoped and Si-doped AlxGa1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the AlxGa1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A1(LO) and E2(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (ΦB) of undoped and Si-doped AlxGa1?xN samples was found to be 0.86 and 0.74 eV, respectively. 相似文献
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This paper details an efficient method of deriving séries solutions of initial value problems traditionally encountered in non-linear mechanics. The developed technique, based on the theory of continuous transformation groups, can be used to solve autonomous as well as non-autonomous systems of ordinary differential equations. Solutions to selected problems are presented for illustration. In addition, the notion of invariants of a transformation group provides information on the nature of trajectories of an initial value problem. 相似文献