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1.
S. A. Gurevich T. A. Zaraiskaya S. G. Konnikov V. M. Mikushkin S. Yu. Nikonov A. A. Sitnikova S. E. Sysoev V. V. Khorenko V. V. Shnitov Yu. S. Gordeev 《Physics of the Solid State》1997,39(10):1691-1695
The concentration and chemical state of copper in the subsurface region of Cu/SiO2 composite films obtained by simultaneous magnetron sputtering from two sources (Cu and SiO2) are determined by x-ray photoelectron spectroscopy (XPS). It is established that copper in the as-grown film is primarily in the form of unoxidized atoms dispersed in a SiO2 matrix. Annealing of the film results in practically no oxidation, but about 70% of the copper atoms condense into metallic clusters with sizes below 10 Å in the subsurface region and about 50 Å in the bulk of the film. The changes in the binding energy of core electrons, and especially in the energies of Auger electrons, are so large in this situation that photoelectron and Auger spectroscopy are efficient methods for monitoring the chemical state of this composite material. 相似文献
2.
Europium (Eu+) ions were confined in a Paul trap and detected by non-destructive method. Storage time of Eu+ ions achieved in vacuum was improved by orders of magnitude employing buffer gas cooling. The experimentally detected signal
was fitted to the ion response signal and the total number of ions trapped was estimated. It is found that the peak signal
amplitude as well as the product of FWHM and the peak signal amplitude is proportional to the total number of trapped ions.
The trapped ion secular frequency was swept at different rates and its effect on the absorption line profile was studied both
experimentally and theoretically. 相似文献
3.
Yu. S. Gordeev V. V. Bryzgalov B. N. Makarenko V. M. Mikushkin S. G. Konnikov P. N. Brunkov V. M. Ustinov A. E. Zhukov 《Technical Physics》2003,48(7):885-888
The modification of GaAs with a 2500-eV beam containing N 2 + and Ar+ ions is examined with Auger electron spectroscopy. Most implanted nitrogen atoms are found to react with the matrix, substituting arsenic atoms to produce a several-nanometer-thick layer of the single-phase GaAs1−x Nx (x=6%) solid solution. The GaN phase is absent. Displaced arsenic atoms and nitrogen atoms unreacted with the matrix are present in the layer and on its surface. The former segregate, whereas the latter form molecules. 相似文献
4.
5.
N. A. Bert M. Z. Zhingarev S. G. Konnikov N. M. Mursakulov D. N. Tretyakov 《Crystal Research and Technology》1980,15(7):787-793
The results of investigations concerning the peculiarities of obtaining InAs—InAs1−xSbx heterostructure and of its properties revealed that the quality of epitaxial layers as well as photoelectric and electroluminescent device structure characteristics are to a great extent determined by a disagreement magnitude of heterostructure materials. — To decrease the magnitude of disagreement at the layer-substrate boundary and to achieve the composition with x > 0.1 at some distance the method of layer-by-layer growth (ANDREWS et al.) and the obtaining a graded heterojunction with optimization of component distribution along epilayer thickness seems to be promising. 相似文献
6.
T. S. Goncharova S. G. Konnikov N. G. Ryabtsev D. N. Tret'yakov T. P. Aleksandrova 《Russian Physics Journal》1973,16(9):1322-1324
Conclusions Crystallization from a solution of antimony in a gallium-aluminum melt has been used to produce epitaxial AlxGa1–xSb films with x=0 to 0.4; isothermal (T = 450, 500, 550°C) and isoconcentration (0; 1; 2.4 at. % Al) sections have been drawn for the liquidus surface on the composition plane. X-ray microspectral analysis has been used to examine the composition of the AlxGa1–xSb films in relation to aluminum content in the melt, as well as the distribution of Al and Ga over the epitaxial film. These films had a perfect structure. The results enable one to determine the solution composition needed to grow AlxGa1–xSb epitaxial films at 450–550°C on gallium antimonide substrates, and it is shown to be possible to make heterostructures in the AlxGa1–xSb-GaSb system.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 16, No. 9, pp. 146–148, September.We are indebted to Zh. I. Alferov and V. I. Shveikin for attention and support in this work. 相似文献
7.
I. A. Konnikov 《Russian Physics Journal》2007,50(7):710-717
A method of calculating the Green’s function for the Laplace equation is suggested. This method is based on the use of properties
of the special Bessel and Struve functions. An example of calculations is given.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 70–76, July, 2007. 相似文献
8.
Eliene O Kozlowski Paula C Lima Cristina P Vicente Tito Lotufo Xingfeng Bao Kazuyuki Sugahara Mauro SG Pavão 《BMC biochemistry》2011,12(1):1-2
After the publication of the work entitled "Dermatan sulfate in tunicate phylogeny: Order-specific sulfation pattern and the effect of [→4IdoA(2-Sulfate)β-1→3GalNAc(4-Sulfate)β-1→] motifs in dermatan sulfate on heparin cofactor II activity", by Kozlowski et al., BMC Biochemistry 2011, 12:29, we found that the legends to Figures 2 to 5 contain serious mistakes that compromise the comprehension of the work. This correction article contains the correct text of the legends to Figures 2 to 5. 相似文献
9.
V. V. Goncharov M. N. Korytov P. N. Brunkov V. V. Lundin E. E. Zavarin A. F. Tsatsul’nikov S. G. Konnikov 《Bulletin of the Russian Academy of Sciences: Physics》2009,73(1):36-38
The effect of growth temperature on the surface morphology of InGaN layers with quantum dots (QDs) on GaN surface has been studied. The optimal conditions for formation of a dense uniform InGaN/GaN QD array with lateral sizes of 20–30 nm, which is characterized by long-wavelength photoluminescence in the range of 420–470 nm, are found. 相似文献
10.
Zh. Alferov V. M. Andrejev T. B. Godlinnik S. G. Konnikov V. R. Larionov 《Crystal Research and Technology》1975,10(6):633-641
The present paper reports on the results of an investigation of crystallization of multilayer structures with a narrow-gap semiconductor surrounded by two wide-gap ones in the Al-Ga-P-As system on GaAs and GaP substrates. Influence of the lattice parameters' difference on the value of thermal stress in structures with a composition gradient was determined by the bend of structures separated from the substrate. It has been proved that with the P concentration in solid solutions being less than 1% heterojunctions with less tensions than in the Al–Ga–As system are available. A new method of obtaining AlxGa1–xPyAs1–y solid solutions with the concentration of P proportional to that of Al has been worked out on the basis of which multilayer heterolight-emitting structures have been prepared. 相似文献