首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   28篇
  免费   0篇
化学   2篇
物理学   26篇
  2013年   1篇
  2009年   1篇
  2003年   1篇
  1992年   1篇
  1990年   5篇
  1989年   2篇
  1988年   2篇
  1987年   5篇
  1986年   4篇
  1985年   5篇
  1937年   1篇
排序方式: 共有28条查询结果,搜索用时 15 毫秒
1.
2.
3.
4.
5.
6.
7.
We show the very particular behavior of focused-ion-beam etching in macroporous silicon. We demonstrate that, contrary to bulk samples, a porous substrate allows extremely high-aspect-ratio patterns to be etched at submicrometer scales. Thanks to the pre-introduced porosity, the secondary effects that limit the pattern depth in bulk-sample etching, namely the sputtered material redeposition as well as the beam ‘self-focusing’ effects, are strongly reduced in a porous sample. In this case the walls between the pores are sputtered in an almost independent way. The etching of deep and straight patterns is feasible. Combined with photoelectrochemical etching that generates the initial macropores, three-dimensional (3D) lattices can be obtained, as demonstrated by 3D photonic crystal fabrication. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +33-1/6915-6086, E-mail: wang@lps.u-psud.fr  相似文献   
8.
9.
10.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号