Thickness dependence of exciton absorption in pure GaAs crystals at the “prequantum” limit

The optical absorption of GaAs crystals with thicknesses d=0.4−4.4 μm is measured in the exciton-polariton resonance region at a temperature of 1.7 K. As the thickness is reduced, both a broadening of the exciton line and increased absorption with a negligible Stark shift are observed. The way the absorption spectra vary with crystal thickness is examined in terms of a competition between two regions for light-exciton interactions in the crystal: in the field of surface charges and electric-field free. Fiz. Tverd. Tela (St. Petersburg) 40, 869–871 (May 1998)     

Nanolithography in microelectronics: A review

The current status of basic photolithographic techniques allowing researchers to achieve results that seemed to be unrealistic even a short time ago is reviewed. For example, advanced DUV photolithography makes it possible to exactly reproduce IC elements 25 times smaller in size than the wavelength of an excimer laser used as a lithographic tool. Approaches owing to which optical lithography has pushed far beyond the Rayleigh-Abbe diffraction limit are considered. Among them are optical proximity correction, introduction of an artificial phase shift, immersion, double exposure, double patterning, and others. The prospects for further advancement of photolithography into the nanometer range are analyzed, and the capabilities of photolithography are compared with those of electronolithography, EUV lithography, and soft X-ray lithography     

Extreme ultraviolet nanolithography for ULSI: A review

The basic concepts of high-resolution extreme ultraviolet nanolithography, which is aimed at producing ultra-large-scale integrated circuits (with an integration one or two orders of magnitude exceeding present-day integration levels), are reviewed and substantiated. The problems in and the current status of this field of technology are considered.     

Tamm plasmon-polaritons: First experimental observation

We report on the first experimental observation of Tamm plasmon-polaritons (TPP) formed at the interface between a metal and a dielectric Bragg reflector (DBR). Contrary to conventional surface plasmons, TPPs have an in-plane wave vector less than the wave vector of light in vacuum, which allows for their direct optical excitation, and can be formed in both the TE and TM polarizations. The angular resolved reflectivity and transmission spectra of a GaAs/AlAs DBR covered by Au films of various thicknesses show the resonances associated with the TPP at low temperatures and at room temperature. The in-plane dispersion of TTPs is parabolic with an effective mass 4×10⁻⁵$4\times 10^{-5}$ of the free electron mass.     

Magnetoelectric effect in cobalt ferrite-barium titanate composites and their electrical properties

CoFe₂O₄-BaTiO₃ composites were prepared using conventional ceramic double sintering process with various compositions. Presence of two phases in the composites was confirmed using X-ray diffraction. The dc resistivity and thermoemf as a function of temperature in the temperature range 300 K to 600 K were measured. Variation of dielectric constant (ɛ′) with frequency in the range 100 Hz to 1 MHz and also with temperature at a fixed frequency of 1 kHz was studied. The ac conductivity was derived from dielectric constant (ɛ′) and loss tangent (tan δ). The nature of conduction is discussed on the basis of small polaron hopping model. The static value of magnetoelectric conversion factor has been studied as a function of magnetic field.     

Exciton absorption of the GaAs semiconductor crystals under optical pumping to the conduction band

Modifications of the exciton structure of the fundamental absorption edge in the GaAs crystals is experimentally studied at T = 1.7 K using the optical pumping at a photon energy that is significantly greater than the band gap. An increase in the amplitude of the fundamental state of the exciton is observed at a stable maximum energy. The dependence of the integral absorption on the pump intensity is interpreted in the framework of the concept of the excitonic polariton using the dissipative scattering of the exciton by free electrons that are generated by the pumping radiation. The constant of the electron-exciton interaction can be estimated with the aid of the solution to the inverse problem for initial pump levels. The integral absorption of the fundamental exciton state at liquid-helium temperatures can be used to characterize the purity of an epitaxial layer. The reasons for the lower saturation level of the integral absorption that is significantly less than the calculated level determined by the exciton oscillator strength need to be further studied.     

Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures

Additional localization of holes due to Coulomb attraction to the electron located in a quantum well is important for light-hole excitons in the heterostructure (In, Ga)As/GaAs. The fine structure of the optical and magneto-optical spectra of these quantum wells is examined in detail with the formation of a “Coulomb well” and deformations taken into account. Fiz. Tverd. Tela (St. Petersburg) 40, 797–799 (May 1998)