Properties of<Emphasis Type="Italic">B</Emphasis><Subscript>c</Subscript> meson

The mass spectrum ofcb meson is investigated with an effective quark-antiquark potential of the form -α_c/r +Ar ^νwith ν varying from 0.5 to 2.0. TheS andP-wave masses, pseudoscalar decay constant, weak decay partial widths in spectator model and the lifetime ofB _cmeson are computed. The properties calculated here are found to be in good agreement with other theoretical and experimental values at potential index,ν = 1     

Which degrees of freedom play a role in multinucleon transfer processes?

A presentation of some recent significant results obtained in the field of multinucleon transfer reactions at Coulomb barrier energies is given. The comparison of the experimental observables with the predictions of theoretical models treating quasi-elastic and deep-inelastic processes on the same ground reveals interesting features of the reaction mechanisms not clearly identified in the past.     

Binding energy effects in the decay properties of charmonia

The di-gamma and di-gluon decay widths of P-wave cc mesons are computed in nonrelativistic phenomenological quark-antiquark potential of the type V (r) =-4 3 α s r+ Ar ν with different choices of ν using spectroscopic parameters.The numerically obtained radial solutions are employed to obtain the di-gamma and di-gluon decay widths.The computed decay widths are consistent with other model predictions as well as with the known experimental values in the range of potential index 0.7 ≤ν≤ 1.1.     

Theoretical total ionization cross-sections of CH x,CF x,SiH x,SiF x ( ) and CCl 4 targets by electron impact

Total ionization cross-sections of electron impact are calculated for the molecular targets CH_x, CF_x, SiH_x, SiF_x (x = 1-4) and CCl₄ at incident energies 20-3 000 eV. The calculation is based on Complex Scattering Potential approach, as developed by us recently. This leads to total inelastic cross-sections, from which the total ionization cross-sections are extracted by reasonable physical arguments. Extensive comparisons are made here with the previous theoretical and experimental data. The present results are satisfactory except for the CF_x and SiF_x (x = 1-3) radicals, for which the experimental data are lower than most of the theories by more than 50%. Received 23 May 2002 / Received in final form 24 October 2002 Published online 21 January 2003 RID="a" ID="a"e-mail: knjoshipura@yahoo.com     

Effect of ZnO doping on the structural and optical properties of BaWO<Subscript>4</Subscript> thin films prepared using pulsed laser ablation technique

BaWO₄ doped with ZnO (2, 3, 5, 7 and 10 wt%) nanostructured films are prepared on quartz substrates by pulsed laser ablation. The films are post annealed at 900°C. GIXRD analysis of the post-annealed films reveal the change of orientation of scheelite tetragonal crystal growth from 1 1 2 reflection plane to 0 0 4 planes when doping concentration is more than 3 wt%. The AFM images show that film with 7 wt% ZnO doping concentration has good ceramic pattern with surface features giving a minimum value of rms surface roughness suitable for optoelectronic device applications. The optical transmittance and band-gap energy of the films are found to decrease considerably on postannealing which can be due to the increase in grain size of the crystallites on annealing. Thus doping with ZnO improves the surface features of the films and increases the optical band-gap energy.