Three-dimensional elastic wave scattering by a layer containing vertical periodic fractures

Elastic wave scattering off a layer containing a single set of vertical periodic fractures is examined using a numerical technique based on the work of Hennion et al. [J. Acoust. Soc. Am. 87, 1861-1870 (1990)]. This technique combines the finite element method and plane wave method to simulate three-dimensional scattering off a two-dimensional fractured layer structure. Each fracture is modeled explicitly, so that the model can simulate both discrete arrivals of scattered waves from individual fractures and multiply scattered waves between the fractures. Using this technique, we examine changes in scattering characteristics of plane elastic waves as a function of wave frequency, angle of incidence, and fracture properties such as fracture stiffness, height, and regular and irregular spacing.     

Growth of Fe on Ge(1 1 1) at room temperature studied by X-ray photoelectron diffraction

The growth of ultrathin Fe films of various coverages on Ge(1 1 1) at room temperature using molecular beam epitaxy (MBE) was studied via X-ray photoelectron diffraction (XPD or XPED) together with low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). All experimentally observed XPD patterns suggested local order structures of the Fe layers for all thicknesses studied. The short-range order of the resulting structures was found to be enhanced for thinner layers whereas the long-range order was gradually lost with increasing Fe thicknesses. At a very low coverage of 0.8 Å Fe and Ge tend to react to the partly ordered structure in which Fe atoms were located in local environments similar to those for higher Fe coverages. Comparison of theoretical and experimental XPD patterns, along with XPS results, showed that intermixing between Fe and Ge occurred during the pseudomorphic growth with a stacking fault near the interface for all Fe coverages under study. Nevertheless, small percentage of domains without the stacking fault was also found to coexist with those with the stacking fault by performing a quantitative analysis of a reliability factor R of the Fe2p pattern for 5.4 Å. The orientation changes of the Ge2p and Ge3d XPD patterns with Fe thickness were unambiguously explained in terms of their different dependencies on the overlayer thickness due to the different inelastic mean free path lengths used in the simulations. Also, Fe got increasingly enriched in the grown layers with increased Fe coverage. The resulting structures and intermixing are discussed in detail.     

X-ray photoelectron diffraction study of discommensurate Cu/Ge(111)

We have studied the atomic structure in the interior of discommensurate domains of the Cu/Ge(111) surface by using scanned-angle X-ray photoelectron diffraction (XPED). XPED patterns of Cu 2p_3/2 intensity provided direct information on the local structure in the vicinity of photoelectron emitters. It has been found that a certain number of Cu atoms are embedded within the surface layer, so that the surface has some structural similarity with the discommensurate Cu/Si(111)-‘5×5’.     

Real-time imaging of ion uptake from root to above-ground part of the plant using conventional beta-ray emitters

We present real-time imaging of ³²P-phosphate within a living plant as well as that in culture solution toward roots. The above-ground part of the plant was irradiated with light from LED and roots were kept in dark. The plant was Lotus japonicus, cv. Miyakojima MG20 and real-time ³²P-phosphate uptake manners in young, flowering and adult phase were visualized. In the case of young plant, there was a preferential translocation of ³²P in younger leaves. When the sample was treated with phosphate deficient condition, ³²P uptake amount was much higher. In an adult phase, ³²P uptake was high at pods.