Optical absorption in layered MnGaInS<Subscript>4</Subscript> single crystals

Optical absorption in MnGaInS₄ single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E _gd and E _gi are −5.06 × 10⁻⁴ and −5.35 × 10⁻⁴ eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.     

Photovoltaic Properties of MnGaInS4 Single Crystals

Technical Physics - The spectral distribution of photoconductivity and the temperature dependence of photocurrent in MnGaInS4 single crystals have been investigated. Photoconductivity spectra...     

Optical absorption in MnIn2S4 single crystals

Optical absorption in MnIn₂S₄ single crystals has been studied. Direct and indirect optical transitions are found to occur at photon energies of 1.90?C2.16 eV in the temperature range of 80?C342 K. The temperature dependence of the band gap is determined; its temperature coefficients E _gd and E _gi are found to be ?4.84 × 10^?4 and ?6.33 × 10^?4 eV/K, respectively. The electron-phonon interaction is the main mechanism of the temperature shift of the intrinsic-absorption edge. MnIn₂S₄ single crystals exhibit anisotropy in polarized light at the absorption edge in the temperature range of 90?C190 K; the nature of this anisotropy is explained.     

Neodymium luminescence in chalcogenides of europium-gallium: EuGaS4 and EuGa2Se4

Photoluminescence of chalcogenides of europium-gallium, EuGa₂S₄ and EuGa₂Se₄, doped with neodymium is investigated. The positions of Stark levels are determined from the spectra. The symmetry of luminescence centres is shown to be lower than cubic and the existence of nonequivalent centers is established. At 77 K the decay time of luminescence from the excited levels of Nd³⁺ depends on the spin of the states. That indicates a slow relaxation rate in the crystals under investigation. It is probable that these crystals can be used as effective luminophores.     

Polarized optical absorption of MnGa<Subscript>2</Subscript>S<Subscript>4</Subscript> single crystals

Optical absorption of MnGa₂S₄ single crystals is studied at two light polarizations (E ||C and E⊥ C). The polarization splitting of the absorption edge points to a splitting of the valence band of MnGa₂S₄. A contribution to the crystal-field splitting is made by two factors, namely, by a difference in the pseudopotential of cationic sublattice atoms and by tetragonal compression of the lattice along the C axis. A scheme of optical transitions in MnGa₂S₄ in the Brillouin zone center is suggested, according to which the optical transitions Г₃ + Г₄ → Г₁ occur in the polarization E ⊥ C, and the Г₂ → Г₁ transitions occur in the polarization E || C.     

Optical absorption and photoconductivity of MnGaInS<Subscript>4</Subscript> single crystals in polarized light

The results of studying optical-absorption and spectral curves of photoconductivity in MnGaInS₄ single crystals are presented for two light polarizations (E || C and E ⊥ C). The intrinsic absorption edge and the band-gap width of MnGaInS4 single crystals in polarized light are determined. The anisotropy of optical absorption and photoconductivity spectrum of MnGaInS₄ single crystals is observed. It is suggested that the polarization splitting of the absorption edge is related to the splitting of the MnGaInS₄ valence band.     

AC electrical properties of FeIn2S4

The frequency and temperature dependences of the ac capacitance and resistivity of FeIn₂S₄ semiconductors are studied. Resonances are observed at certain temperatures in the frequency range (2.5–5.0) × 10⁵ Hz. The permittivity of the crystals and the activation energy of charge carriers are determined. It is found that electrical conduction in the given temperature interval is governed by an activation mechanism. The activation energy is frequency-dependent, because the relaxation time of barrier layers decreases with rising frequency.