排序方式: 共有46条查询结果,搜索用时 15 毫秒
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E. S. Moskalenko M. Larsson K. F. Karlsson P. O. Holtz B. Monemar W. V. Schoenfeld P. M. Petroff 《Physics of the Solid State》2007,49(10):1995-1998
We report on low-temperature microphotoluminescence (μ-PL) measurements of InAs/GaAs quantum dots (QDs) exposed to a lateral
external electric field. It is demonstrated that the QDs’ PL signal could be increased severalfold by altering the external
and/or the internal electric field, which could be changed by an additional infrared laser. A model which accounts for a substantially
faster lateral transport of the photoexcited carriers achieved in an external electric field is employed to explain the observed
effects. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity
measured in our experiment—a finding which could be used to tailor the properties of QD-based optoelectronic applications.
The text was submitted by the authors in English. 相似文献
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M. Sabooni M. Esmaeili H. Haratizadeh B. Monemar P. Paskov S. Kamiyama M. Iwaya H. Amano I. Akasaki 《Opto-Electronics Review》2007,15(3):163-167
We report results from optical spectroscopy such as photoluminescence (PL) and time resolved photo-luminescence (TRPL) techniques
from different well width MOCVD grown GaN/Al0.07Ga0.93N MQW samples. There is evidence of localization at low temperature in all samples. The decay time of all samples becomes
non-exponential when the detection energy is increased with respect to the peak of the emission. Localization of carriers
(excitons) is demonstrated by the “S-shape” dependences of the PL peak energies on the temperature. The time-resolved PL spectra
of the 3-nm well multi quantum wells reveal that the spectral peak position shifts toward lower energies as the decay time
increases and becomes red-shifted at longer decay times. There is a gradient in the PL decay time across the emission peak
profile, so that the PL process at low temperatures is a free electron-localized hole transition. 相似文献
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Shubina TV Glazov MM Toropov AA Gippius NA Vasson A Leymarie J Kavokin A Usui A Bergman JP Pozina G Monemar B 《Physical review letters》2008,100(8):087402
We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phenomenon is quantitatively explained in terms of optical dispersion in a medium where resonant light scattering by the BX resonance takes place in addition to the polariton propagation. 相似文献
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G. Pozina C.G. Hemmingsson J.P. Bergman D. Trinh L. Hultman B. Monemar 《Superlattices and Microstructures》2008,43(5-6):605
Freestanding GaN layers of various thicknesses grown by HVPE have been studied by time-resolved spectroscopy combined with structural and electrical measurements. We have observed an increase of the PL lifetime with increasing layer thickness; however, a saturation of the recombination times has been detected for the GaN layers thicker than 400 μm. We explain the observed thickness-dependent behavior of the decay times by competition of two nonradiative mechanisms; namely, for layers with thickness less than 400 μm the main nonradiative channel is related to the structural defects, while in thicker layers the recombination decay time is limited by impurities and/or vacancies. 相似文献