Open spaces and relaxation processes in the subsurface region of polypropylene probed by monoenergetic positron beams

Open spaces and relaxation processes in the subsurface region of isotactic polypropylene were investigated by monoenergetic positron beams. From measurements of the lifetime spectra of positrons, the size of the open spaces in the subsurface region (≤ 0.2 μm) was found to be larger than that in the bulk; their differences were estimated as 20% at 295 K and 10% at 395 K. From conventional positron annihilation experiments, the glass‐transition temperatures, T_{g (upper)}and T_g(lower) were determined as 306 K and 278 K, respectively. These transition temperatures were associated with the onset temperatures of the molecular motions under the constraint imposed by crystalline regions and those free from the constraint, respectively. In the subsurface region, although the onset temperatures of the molecular motions were close to those in the bulk, the molecular motions above T_{g (lower)} were found to be suppressed. The annihilation characteristics of positrons with different implantation energies were also discussed. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 38: 101–107, 2000     

Positron/positronium annihilation in nanocrystalline silicon thin films

Positron and positronium annihilation investigations were applied to nanocrystalline silicon (nc-Si) thin films, for the first time. The nc-Si thin films with average grain diameters of 3–5 nm show intense blue luminescence at room temperature. The nanometer-sized Si crystallites formed in amorphous Si (a-Si) matrix give rise to this luminescence. Very highS-parameters up to 0.62 were observed in the as-grown a-Si thin film suggesting positronium formation in the a-Si layer. The average lifetime of the positrons in the a-Si was determined to be about 520 ps. TheS-parameters dropped significantly to 0.53 by crystallization of the thin film at 800 °C for 10 seconds, which was almost the same to the value observed in bulk Si (100) substrate. Further crystallization from 60 seconds to 1 hour showed smaller change in theS-parameters than that from the a-Si to 10 seconds. The large change in theS-parameters due to the annealing might be caused by the formation of Si nanocrystallites in a-Si matrix suggesting that positron is a sensitive probe for structural investigations of the nc-Si materials.     

An intense pulsed positron beam

A positron pulsing system for an intense positron beam generated by an electron linac is reported. The pulsing system generates an intense pulsed positron beam of variable energy and variable pulse period. The pulsed positron beam is used as a non-destructive probe for various material research. In this paper, we also discuss applications of the pulsed positron beam: positron lifetime spectroscopy, age-momentum correlation spectroscopy, positronium time-of-flight measurement, and positron annihilation-induced Auger electron spectroscopy with a time-of-flight technique.     

Characterization of photoresists for ArF‐excimer laser lithography using monoenergetic positron beams

The volume and depth distributions of open spaces in photoresist films designed for ArF‐excimer laser light exposure were studied with monoenergetic positron beams. We measured the Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons for acrylate and cyclic olefin‐co‐maleic anhydride (COMA) polymers spin‐coated onto Si wafers with methyl amyl ketone, cyclohexanone, and propylene glycol methyl ether acetate solvents. The volume of open spaces in both prebaked acrylate and COMA films was estimated to be 0.12 nm³. The volume of open spaces in acrylate films decreased up to 20% by postexposure baking, but no large change was observed for COMA films. The decrease in the open volume was attributed to the removal of large molecules (adamantyl) from flexible main chains after the chemically amplified reaction of acrylate. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 341–346, 2004     

Characterization of silicon dioxide deposited by low-temperature CVD using TEOS and ozone by monoenergetic positron beams

Monoenergetic positrons were used as a nondestructive probe for SiO₂ films deposited on Si substrates by atmospheric-pressure chemical vapor deposition using tetraethylortho-silicate (TEOS, Si(OC₂H₅)₄) and O₃. The formation of positronium (Ps) in the SiO₂ films was found from measurements of Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons. A clear correlation between the formation probability of Ps and the concentration of H₂O in the SiO₂ films was established.     

Defects in separation by implanted oxygen wafer probed by monoenergetic positron beams

Defects in the separation by implanted oxygen (SIMOX) wafers were studied by monoenergetic positron beams. For the as-implanted specimen, vacancies introduced by ion implantation were found to form vacancy-oxygen complexes. After high temperature annealing, a drastic increase in the formation probability of positronium was observed. This suggests an introduction of open-spaces by the formation of an amorphous SiO₂. The present investigation shows that positrons provide a nondestructive probe for the detection of defects in SIMOX wafers and microstructures of SiO₂.     

Stretching of slow positron pulses generated with an electron linac

A facility for generating a high intensity slow positron beam using an electron linear accelerator has been constructed. A conversion efficiency of 6×10^–7 slow positrons per incident electron has been obtained for 75 MeV electrons. Storage and stretching of pulsed slow positrons have been successfully carried out with a Penning trap.     

Slow positron study on dielectric-coated mirror for free-electron-laser experiments

A positron lifetime study has been done on dielectric multilayer cavity mirrors for free-electron-laser experiments by the use of a variable-energy pulsed positron beam. A long-lived ortho-positronium component has been observed at low positron energy region, corresponding to the depth of the top amorphous SiO₂ layer. The intensity of the positronium component correlates with the degradation and restoration of the mirrors. We discuss the relation between the positronium intensity and degradation mechanism of the mirrors. The present studies revealed that the slow positron lifetime technique is highly sensitive to the properties of the mirrors and is useful for the evaluation of the mirrors.     

Production and application of pulsed slow positron beam using an electron linac

Slow positron beam is quite useful for non-destructive material research. At the Electrotechnical Laboratory (ETL), an intense slow positron beam line has been constructed by exploiting an electron linac in order to carry out various experiments on material analysis. The beam line can generate pulsed positron beams of variable energy and variable pulse period. Various capabilities of the intense pulsed positron beam is presented, based on the experience at the ETL, and the prospect for the future is discussed.