High-resolution investigations of ripple structures formed by femtosecond laser irradiation of silicon

We report on the structural investigation of self-organized periodic microstructures (ripples) generated in Si(100) targets after multishot irradiation by approximately 100-fs to 800-nm laser pulses at intensities near the single shot ablation threshold. Inspection by surface sensitive microscopy, e.g., atomic force microscopy (AFM) or scanning electron microscopy (SEM), and conventional and high-resolution transmission electron microscopy reveal complex structural modifications upon interaction with the laser: even well outside the ablated area, the target surface exhibits fine ripple-like undulations, consisting of alternating crystalline and amorphous silicon. Inside the heavily modified area, amorphous silicon is found only in the valleys but not on the crests which, instead, consist of highly distorted crystalline phases, rich in defects.     

Microstructure of thermoelectric (Bi0.15Sb0.85)2Te3 film

The film of thermoelectric ternary p-type (Bi_0.15Sb_0.85)₂Te₃ was deposited on polyimide foil substrate at 168 °C using direct-current magnetron sputtering. Microstructural investigations of the film were performed by electron microscopy techniques. SEM observations showed that the film surface consisted of large-sized particulates with small-sized particles and also mound-like crystal agglomerates in some areas. Chemical composition of the film was analyzed using energy-dispersive X-ray spectrometer (EDS). It has been observed that the EDS results were in an agreement with nominal composition for the film. Detailed microstructural investigations were carried out using transmission electron microscopy (TEM). TEM images and selected area electron diffraction patterns showed that the film has randomly oriented polycrystalline grain structure. High-resolution TEM images indicated that the microstructure of film also contained nano-crystal structure, smaller than 10 nm.     

Comparison of growth methods for Si/SiO2 nanostructures as nanodot hetero-emitters for photovoltaic applications

Two different growth mechanisms are compared for the fabrication of Si/SiO₂ nanostructures on crystalline silicon (c-Si) to be used as hetero-emitter in high-efficiency solar cells: (1) The decomposition of substoichiometric amorphous SiO_x (a-SiO_x) films with 0 < x < 1.3 and (2) the dewetting of thin amorphous silicon (a-Si) layers.The grown layers are investigated with regard to their structural properties, their passivation quality for c-Si wafer substrates and their electrical properties in order to evaluate their suitability as a nanodot hetero-emitter. While by layer decomposition, no passivating nanodots could be formed, the dewetting process allows fabricating nanodot passivation layers at temperatures as low as 600 °C. The series resistance through Ag/[Si-nanodots in SiO₂]/c-Si/Al structures for dewetting is similar to nanostructured silicon rich SiO_x films. Still, a nanodot hetero-emitter which exhibits both a satisfying passivation of the substrate and induces a high band bending by doping at the same time could not be fabricated yet.     

7Li NMR as probe for solvent–cellulose interactions in cellulose dissolution

Molten salt hydrates proved to be alternative solvents to cellulose. Toinvestigate the reasons for this dissolving ability, information about thesolvent–cellulose interactions is essential. As well as ¹³CHR NMR, ⁷Li NMR was used to obtain further insight into thisproblem.After comparing several molten salt hydrates, the ⁷Li NMR spectrarevealed a smaller shielding of the lithium cation for not dissolving than fordissolving and swelling cellulose systems. In most solvent systems theshieldingat the ⁷Li nuclei increases with the cellulose concentration. 2D⁷Li-¹H HOESY NMR was successfully applied to verify thepresence of cellobiose, used as a model compound for cellulose, in the firstco-ordination sphere of the lithium cation.     

Divacancy complexes induced by Cu diffusion in Zn-doped GaAs

Positron annihilation spectroscopy was applied to investigate the nature and thermal behavior of defects induced by Cu diffusion in Zn-doped p-type GaAs crystals. Cu atoms were intentionally introduced in the GaAs lattice through thermally activated diffusion from a thin Cu capping layer at 1100 °C under defined arsenic vapor pressure. During isochronal annealing of the obtained Cu-diffused GaAs in the temperature range of 450?850 K, vacancy clusters were found to form, grow and finally disappear. We found that annealing at 650 K triggers the formation of divacancies, whereas further increasing in the annealing temperature up to 750 K leads to the formation of divacancy-copper complexes. The observations suggest that the formation of these vacancy-like defects in GaAs is related to the out-diffusion of Cu. Two kinds of acceptors are detected with a concentration of about 10¹⁶ ? 10¹⁷ cm^?3, negative ions and arsenic vacancy copper complexes. Transmission electron microscopy showed the presence of voids and Cu precipitates which are not observed by positron measurements. The positron binding energy to shallow traps is estimated using the positron trapping model. Coincidence Doppler broadening spectroscopy showed the presence of Cu in the immediate vicinity of the detected vacancies. Theoretical calculations suggested that the detected defect is V _Ga V _As-2Cu_Ga.     

High-resolution analytical electron microscopy of catalytically etched silicon nanowires

We report on the characterization of hexagonally ordered, vertically aligned silicon nanowires (SiNW) by means of analytical transmission electron microscopy. Combining colloidal lithography, plasma etching, and catalytic wet etching arrays of SiNW of a sub-50 nm diameter with an aspect ratio of up to 10 could be fabricated. Scanning transmission electron microscopy has been applied in order to investigate the morphology, the internal structure, and the composition of the catalytically etched SiNW. The analysis yielded a single-crystalline porous structure composed of crystalline silicon, amorphous silicon, and SiO _x with x≤2.     

Raman microscopic investigations of BaTiO<Subscript>3</Subscript> precursors with core–shell structure

Due to their outstanding dielectric and ferroelectric properties, barium titanate (BaTiO₃)-based ceramics have found many applications in electronic devices. To optimise the final quality of such ceramics, a detailed knowledge of the complex processes involved in the formation of BaTiO₃ is required. The phase formation process in ordered structures of the BaCO₃/TiO₂ system was analysed by X-ray diffraction and by Raman spectral imaging (RSI) as a function of the annealing temperature. RSI was used for the first time as a locally resolving method for phase analysis, and proved to be a useful tool in examining the formation process of BaTiO₃ starting from spherical, core–shell structured precursors of the type TiO₂ core/BaCO₃ shell. The Raman spectra of different BaO–TiO₂ phases appearing as intermediate phases during the formation of BaTiO₃ were recorded for separately-prepared pure substances. Using these spectra as fingerprints, and choosing phase filters by setting wave number windows, phase landscape pictures of the samples at different temperatures during the genesis of BaTiO₃ could be created with a lateral resolution of up to 200 nm. These pictures confirm shell-like formation of the different barium titanate phases according to the diffusion of barium and oxygen ions from the Ba-rich shell into the TiO₂ core. At an intermediate state of the phase formation process, the phase sequence Ba₂TiO₄, BaTiO₃, BaTi₂O₅, BaTi₄O₉ and BaTi₅O₁₁ to TiO₂ was detected from the outer to the inner parts of the core–shell structures.