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1.
For an integer , a graph is -hamiltonian if for any vertex subset with , is hamiltonian, and is -hamiltonian connected if for any vertex subset with , is hamiltonian connected. Thomassen in 1984 conjectured that every 4-connected line graph is hamiltonian (see Thomassen, 1986), and Ku?zel and Xiong in 2004 conjectured that every 4-connected line graph is hamiltonian connected (see Ryjá?ek and Vrána, 2011). In Broersma and Veldman (1987), Broersma and Veldman raised the characterization problem of -hamiltonian line graphs. In Lai and Shao (2013), it is conjectured that for , a line graph is -hamiltonian if and only if is -connected. In this paper we prove the following.(i) For an integer , the line graph of a claw-free graph is -hamiltonian if and only if is -connected.(ii) The line graph of a claw-free graph is 1-hamiltonian connected if and only if is 4-connected. 相似文献
2.
This study is concerned with a new,explicit approach by means of which forms of the large strain elastic potential for multiaxial rubberlike elasticity may be obtained based on data for a single deformation mode.As a departure from usual studies,here for the first time errors may be estimated and rendered minimal for all possible deformation modes and,furthermore,failure behavior may be incorporated.Numerical examples presented are in accurate agreement with Treloar's well-known data. 相似文献
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用单摆测定当地的重力加速度和单摆振动定律的验证,很容易做.下面谈谈影响单摆实验的几个因素及其解决方法.1 用单摆测定当地重力加速度 可见,g的测定主要取决于l和T.因此,为了提高实验的精度,在测量过程中必须注意以下几个方面. 相似文献
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A graph G is N2‐locally connected if for every vertex ν in G, the edges not incident with ν but having at least one end adjacent to ν in G induce a connected graph. In 1990, Ryjá?ek conjectured that every 3‐connected N2‐locally connected claw‐free graph is Hamiltonian. This conjecture is proved in this note. © 2004 Wiley Periodicals, Inc. J Graph Theory 48: 142–146, 2005 相似文献
7.
通过调整Mn的成分,系统地研究了Ni81Fe19/Ni100-xMnx双层膜的磁学性质,特别是交换偏置场(Hex)的变化.当Ni100-xMnx中Mn的原子百分比在534%到600%之间时,对于150nm的Ni81Fe19,得到了最大的交换偏置场175kA/m,同时由于Mn对Ni81Fe19层的扩散所造成的磁矩的降低小于20%;高角x射线衍射证明Ni100-xMnx的晶格常数随着Mn成分的改变而变化,Mn含量越多,其晶格常数越大;制备态Ni100-xMnx膜晶格常数与θ相NiMn膜晶格常数的接近程度与NiMn膜θ相形成的容易程度相对应.也研究了交换偏置场随着Ni100-xMnx厚度的变化,第一次得到了当Ni100-xMnx中Mn的原子百分比为706%时,Ni81Fe19(150nm)/Ni100-xMnx(90nm)双层膜在经过240℃,5h退火后,可以有80kA/m的交换偏置场,此时铁磁层磁矩的大小几乎不变.
关键词:
Ni81Fe19/Ni100-xMnx
交换偏置场 相似文献
8.
研究非Chetaev型变质量非完整系统的Lie对称性与Noether对称性以及其间的 关系,给出Lie对称性导致Noether对称性以及Noether对称性导致Lie对称性的条件. 相似文献
9.
The process of single liquid drop impact on thin liquid surface is numerically simulated with moving particle semi‐implicit method. The mathematical model involves gravity, viscosity and surface tension. The model is validated by the simulation of the experimental cases. It is found that the dynamic processes after impact are sensitive to the liquid pool depth and the initial drop velocity. In the cases that the initial drop velocity is low, the drop will be merged with the liquid pool and no big splash is seen. If the initial drop velocity is high enough, the dynamic process depends on the liquid depth. If the liquid film is very thin, a bowl‐shaped thin crown is formed immediately after the impact. The total crown subsequently expands outward and breaks into many tiny droplets. When the thickness of the liquid film increases, the direction of the liquid crown becomes normal to the surface and the crown propagates outward. It is also found that the radius of the crown is described by a square function of time: rC = [c(t ? t0)]0.5. When the liquid film is thick enough, a crown and a deep cavity inside it are formed shortly after the impact. The bottom of the cavity is initially oblate and then the base grows downward to form a sharp corner and subsequently the corner moves downward. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
10.
M. Missous C. Mitchell J. Sly K. T. Lai R. Gupta S. K. Haywood 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):496
Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In0.84Ga0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated. 相似文献