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1.
The effect of free carriers on the dispersion and damping of coupled phonon-plasmon modes is considered in the long-wave approximation. The electron and phonon scattering rate, as well as Landau damping, is taken into account.  相似文献   
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3.
3-(4-Phenyl) benzoyl propionic acid was used as the starting material for the synthesisof furanones (2), pyrrolinones (5), pyridazinones (7), benzoxazinones (8) and quinazolinones (9-11). The behaviour of the derivatives of furanones and benzoxazinones toward different nucleophiles is reported.  相似文献   
4.
YBa2Cu3-xVxO7-y(x=0, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6) superconductors have been prepared. X-ray diffraction shows that the system remains orthorhombic for all compositions studied, but for x > 0.4 V2O5 was detected as an impurity phase. Substitution of V5+ for Cu2+ occurs in the Cu(2) sites on the Cu(2)-O planes. The introduction of the high valence element, vanadium, produces the extra free-electrons. These electrons recombine with the positive carrier of the system. It makes depression of the mobility and the Hall number of YBa2Cu3-xVxO7-v and also results in a depression of TC.  相似文献   
5.
Abstract— Chemiluminescence of the Eu(II)/Eu(III)-adenine nucleotide-H2O2 system and fluorescence of the Eu(III)-adenosine triphosphate system have been investigated. The spectral distribution of the chemiluminescence emission has shown an occurrence of three main bands (Λ=470–480,590–620 and ca. 700 nm). The energy transfer process from the adenosine triphosphate molecules to the Eu(III) ions has been observed in the fluorescence spectrum. The examined chemiluminescence and fluorescence spectra show that these both kinds of emission originate from the 5 D ***τ7F*** ( n =1–4) transitions in the Eu(III) ions.  相似文献   
6.
针对纤维材料变温环境力学性能测试的需要,在华中科技大学研制的纤维材料试验机的基础上引入了温控装置,从而实现纤维材料在高低温环境下的力学性能测试。采用该装置对不同直径微米铜丝在不同温度、不同拉伸速率条件下的力学性能开展实验研究,测试结果表明弹性模量和抗拉强度随温度的降低而线性增加,屈服强度的变化不太明显。另外,低温环境下微米铜丝的力学性能表现出与其直径相关的尺度效应,而这一现象在常温下一直没有观测到。最后,还研究了拉伸速率对微米铜丝的力学性能影响,结果表明,在现有装置的许用范围之内,拉伸速率对其力学性能的影响不大。  相似文献   
7.
The theory of Raman scattering by the coupled electron-phonon system in metals and heavily doped semiconductors is developed with Coulomb screening and the electron-phonon deformation interaction taken into account. The Boltzmann equation for carriers is applied. Phonon frequencies and optic coupling constants are renormalized due to interactions with carriers. The k-dependent semiclassical dielectric function is employed instead of the Lindhard-Mermin expression. The results of calculations are presented for various values of the carrier concentration and the electron-phonon coupling constant.  相似文献   
8.
The cross section of the inelastic light scattering by electron-hole plasma in metals is studied. The Coulomb interaction of electron excitations is taken into account self-consistently. The system of the Boltzmann equation for electronic fluctuations and Maxwell’s equations for the interaction field is solved. The Raman spectra consist of the electron-hole background, diffuson and plasmon resonances. The widths of this background and resonance are determined by the electron collision rate as well as by the decay of the incident and scattered radiation in the metal. The line shape depends on the screening of the electron-light interaction, i.e., on the incident radiation frequency. Zh. éksp. Teor. Fiz. 112, 679–689 (August 1997) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.  相似文献   
9.
This paper deals with robustness of adaptive control of continuoussystems subject to known output delay, input saturation, unmodelledlinear dynamics, and bounded disturbances. A simple gradient-typealgorithm with a relative deadzone is used. The relative deadzoneis built with an estimated contribution of the unmodelled dynamicsto the system output. The basic tool used for stability androbustness analysis is Gronwall's lemma.  相似文献   
10.
The graphite conductivity is evaluated for frequencies between 0.1 eV, the energy of the order of the electronhole overlap, and 1.5 eV, the electron nearest hopping energy. The in-plane conductivity per single atomic sheet is close to the universal graphene conductivity e 2/4ħ and, however, contains a singularity conditioned by peculiarities of the electron dispersion. The conductivity is less in the c direction by the factor of the order of 0.01 governed by electron hopping in this direction.  相似文献   
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