Band structures in73Se

Excited states of⁷³Se have been investigated up to spin, 21/2 using techniques of in-beamγ-ray spectroscopy in connection with the⁷⁰Ge(α, n) reaction. Mean lifetimes of 12 levels have been determined applying Doppler-shift andγ-RF-methods. Five different bands have been identified that reflect a variety of different excitation modes. The decoupled 9/2⁺ band is likely to correspond to an oblate deformation while the 5/2⁺ band is interpreted as a strongly coupled prolate band built on the Nilsson configuration [422] 5/2⁺. The 3/2^? band is a strongly coupled band built on the [301] 3/2^} configuration.Nuclear reactions:⁷⁰Ge(α,n),E=14, 16, 18, 19, 20MeV; measuredE _γ,I _γ,σ(E _γ,θ),γγ-coin, linear polarization, DSA,γ(t).⁷⁵Se deduced levels,I, π, τ, δ(E2/M1), B(σλ). Enriched targets, Ge detectors.     

Ions and atoms in superfluid helium (4He)

We review the previous conclusion [J.Y. Ryu, Y.C. Chung and S.D. Choi, Phys. Rev. B 32, 7769 (1984)] that the trace property Tr(ABC) = Tr(CAB) leads to two different cyclotron transition absorption formulae in the electron-phonon systems in the lowest order approximation. The pictorial expression and the calculated linewidths in Ge and Si show that the socalled EWC scheme is more seeming than the socalled MWC scheme. The difference is expected to disappear if we take into account all the higher order perturbation terms or start with the many body formalism in the complete scheme.     

Temperature measurements in CO2-laser-induced pyrolysis flames for SiC and ternary SiC/C/B powder synthesis by means of CARS

The hot luminescent reaction zones of CO₂-laser-induced pyrolysis flames using SiH₄/C₂H₂ gas mixtures with different silane to acetylene ratios and with and without diborane additives were investigated by means of H₂ Q-branch CARS spectroscopy, leading to spatial temperature profiles in gas flow direction. In the case of B₂H₆ additive to the stoichiometric SiH₄/C₂H₂ mixture a high temperature plateau ( 800–1000 K) of the reactant gas volume develops already several millimetres before reaching the CO₂-laser focus line. This precursor preheating zone could be explained by the catalytic effect of boron atoms or boron-containing intermediate species in the flame. A similar behaviour for acetylene-rich flames operating at half laser power was not observed.     

The electronic structure of molecules by a many-body approach : II. Ionization potentials one-electron properties of pyridine and phosphoridine

The valence ionization potential (IPs) of pyridine and phosphoridine are studied by an ab initio many-body approach which includes the effects of electron correlation and reorganization beyond the Hartree-Fock approximation. For pyridine the order of the first three IPs is a₂(π), a₁(n), b₁(π), but the IPs of the a₂ and a₁ orbitals are so close together that they have to be regarded as identical in binding energy, which is also concluded from experiment. Whereas for pyridine the ordering of the IPs calculated in the HF approximation is incorrect, it is correct for phosphoridine. For this latter molecule the first three ionization potentials are due to ionization from the b₁(π), a₂(π), and a₁(n) orbitals. Several one-electron properties are calculated and compared with experimental and other theoretical data. The localized molecular orbitals are discussed as well.     

FRIEDEL-CRAFTS-Reaktionen der C7-, C8- und C12-Cycloalkane mit Kohlenmonoxid

The reaction of cycloheptane, cyclooctane, and cyclododecane with carbon monoxide under pressure in the presence of anhydrous aluminium chloride has been investigated. Cycloheptane leads to acetylcyclohexane and trans-2-methyl-cyclohexane carboxylic acid as main products. Cyclooctane yields 3- and trans-4-acetyl-methylcyclohexane and various dimethylcyclohexane carboxylic acids. From cyclododecane a mixture of numerous ketones has been obtained besides a mixture of acids.     

Konstruktion von Fundamentallösungen für Convolutoren in roumieuschen Ultradistributionsräumen

Fundamental solutions in a space D(M_p) of Roumieu ultradistributions are constructed for convolutors f whose Fourier transform is slowly decreasing. The solutions are of exponential growth if satisfies a stronger condition. These results include a constructive proof of the known existence theorem of Chou. For families of convolutors our method yields solutions which depend continuously on parameters.     

Laser-supported detonation waves and material processing with pulsed CO2 lasers

Summary The processing of metals with short CO₂ laser pulses is strongly influenced by an air-breakdown plasma (LSD-wave). Material removal is possible only if the duration of this LSD-wave can be kept short compared with the length of the laser pulse. A simple model for the calculation of is developed allowing the derivation of an analytic formula and leading to good agreement with experimental data.

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Zusammenfassung Die Bearbeitung von Metallen mit kurzen CO₂-Laserpulsen wird von einem Air-Breakdown-Plasma (LSD-Welle) stark beeinflusst. Materialabtragung ist nur dann möglich, wenn die Dauer dieser LSD-Welle wesentlich kürzer ist als die gesamte Pulslänge. Es wird ein einfaches Modell für die Berechnung von entwickelt. Daraus lässt sich ein analytischer Ausdruck herleiten. Die Resultate stehen in guter Uebereinstimmung mit experimentellen Daten.

     

Cathodoluminescence Depth Profiling in SiO2:Ge Layers

 For investigation of the luminescent center profile cathodoluminescence measurements are used under variation of the primary electron energy E ₀ = 2…30 keV. Applying a constant incident power regime (E ₀·I ₀ = const), the depth profiles of luminescent centers are deduced from the range of the electron energy transfer profiles dE/dx. Thermally grown SiO₂ layers of thickness d = 500 nm have been implanted by Ge⁺-ions of energy 350 keV and doses (0.5–5)10¹⁶ ions/cm². Thus Ge profiles with a concentration maximum of (0.4 – 4) at% at the depth of d_m≅240 nm are expected. Afterwards the layers have been partially annealed up to T _a = 1100 °C for one hour in dry nitrogen. After thermal annealing, not only the typical violet luminescence (λ = 400 nm) of the Ge centers is strongly increased but also the luminescent center profiles are shifted from about 250 nm to 170 nm depth towards the surface. This process should be described by Ge diffusion processes, precipitation and finally Ge nanocluster formation. Additionally, a Ge surface layer is piled-up extending to a depth of roughly 25 nm.