Investigation of the chemical state of copper in Cu/SiO2 composite films by x-ray photoelectron spectroscopy

The concentration and chemical state of copper in the subsurface region of Cu/SiO₂ composite films obtained by simultaneous magnetron sputtering from two sources (Cu and SiO₂) are determined by x-ray photoelectron spectroscopy (XPS). It is established that copper in the as-grown film is primarily in the form of unoxidized atoms dispersed in a SiO₂ matrix. Annealing of the film results in practically no oxidation, but about 70% of the copper atoms condense into metallic clusters with sizes below 10 Å in the subsurface region and about 50 Å in the bulk of the film. The changes in the binding energy of core electrons, and especially in the energies of Auger electrons, are so large in this situation that photoelectron and Auger spectroscopy are efficient methods for monitoring the chemical state of this composite material.     

Modification of GaAs by medium-energy N<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> ions

The modification of GaAs with a 2500-eV beam containing N ₂ ⁺ and Ar⁺ ions is examined with Auger electron spectroscopy. Most implanted nitrogen atoms are found to react with the matrix, substituting arsenic atoms to produce a several-nanometer-thick layer of the single-phase GaAs_1−x N_x (x=6%) solid solution. The GaN phase is absent. Displaced arsenic atoms and nitrogen atoms unreacted with the matrix are present in the layer and on its surface. The former segregate, whereas the latter form molecules.     

Epitaxy of AlxGa1−xSb films from a molten metal.

Conclusions Crystallization from a solution of antimony in a gallium-aluminum melt has been used to produce epitaxial Al_xGa_1–xSb films with x=0 to 0.4; isothermal (T = 450, 500, 550°C) and isoconcentration (0; 1; 2.4 at. % Al) sections have been drawn for the liquidus surface on the composition plane. X-ray microspectral analysis has been used to examine the composition of the Al_xGa_1–xSb films in relation to aluminum content in the melt, as well as the distribution of Al and Ga over the epitaxial film. These films had a perfect structure. The results enable one to determine the solution composition needed to grow Al_xGa_1–xSb epitaxial films at 450–550°C on gallium antimonide substrates, and it is shown to be possible to make heterostructures in the Al_xGa_1–xSb-GaSb system.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 16, No. 9, pp. 146–148, September.We are indebted to Zh. I. Alferov and V. I. Shveikin for attention and support in this work.     

A method of calculating the Green’s function for a layered medium

A method of calculating the Green’s function for the Laplace equation is suggested. This method is based on the use of properties of the special Bessel and Struve functions. An example of calculations is given. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 70–76, July, 2007.     

Study of the formation of InGaN quantum dots on GaN surface

The effect of growth temperature on the surface morphology of InGaN layers with quantum dots (QDs) on GaN surface has been studied. The optimal conditions for formation of a dense uniform InGaN/GaN QD array with lateral sizes of 20–30 nm, which is characterized by long-wavelength photoluminescence in the range of 420–470 nm, are found.     

Investigation of InAs—InSb solid solution heteroepitaxial layers and structures

The results of investigations concerning the peculiarities of obtaining InAs—InAs_1−xSb_x heterostructure and of its properties revealed that the quality of epitaxial layers as well as photoelectric and electroluminescent device structure characteristics are to a great extent determined by a disagreement magnitude of heterostructure materials. — To decrease the magnitude of disagreement at the layer-substrate boundary and to achieve the composition with x > 0.1 at some distance the method of layer-by-layer growth (ANDREWS et al.) and the obtaining a graded heterojunction with optimization of component distribution along epilayer thickness seems to be promising.     

Preparation of Al?Ga?P?As heterostructures

The present paper reports on the results of an investigation of crystallization of multilayer structures with a narrow-gap semiconductor surrounded by two wide-gap ones in the Al-Ga-P-As system on GaAs and GaP substrates. Influence of the lattice parameters' difference on the value of thermal stress in structures with a composition gradient was determined by the bend of structures separated from the substrate. It has been proved that with the P concentration in solid solutions being less than 1% heterojunctions with less tensions than in the Al–Ga–As system are available. A new method of obtaining Al_xGa_1–xP_yAs_1–y solid solutions with the concentration of P proportional to that of Al has been worked out on the basis of which multilayer heterolight-emitting structures have been prepared.     

X-ray crystallographic investigation of ZnS:Ag, Cu, Mg single crystals

Splitting of the profiles of diffraction lines from the [110] planes of ZnS:Ag, Cu, Mg single crystals into two, and sometimes three, peaks has been observed. The relative intensity of the peaks is compared with the volume fraction, obtained from optical excitonic spectra, of interlayers of a hexagonal phase in the samples. Fiz. Tverd. Tela (St. Petersburg) 39, 49–51 (January 1997)     

Study of the Phase Transition in Hg<Subscript>2</Subscript>Cl<Subscript>2</Subscript> Crystals Using Anomalous X-Ray Transmission

The small-angle X-ray scattering in calomel (univalent mercury chloride Hg₂Cl₂) single crystals at low temperatures has been investigated. Data on the size of superstructural ferroelectric domains have been obtained for the first time. Lang measurements with anomalous X-ray transmission have made it possible to trace the temperature dynamics of crystal lattice of the high-temperature D_4h phase of Hg₂Cl₂ from 300 K to the Curie temperature (186 K) and the formation of ferroelastic domains in the temperature range of 186–100 K. The lowering of paraphase symmetry in the closest vicinity of the phase transition temperature is indicative of tricritical point transition.     

Use of the variational principle with the aim of determining oscillations in the extended X-ray absorption fine structure

A method of determining the smooth and oscillating components of extended X-ray absorption fine structure spectra is developed. The form of a functional that is minimized by the desired smooth function is suggested, and a series of EXAFS spectra is analyzed. A way of solution optimization is proposed. The results of applying the method to experimental spectra are reported.