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Chen Kai-Huang Cheng Chien-Min Shih Chia-Chi Tsai Jen-Hwan 《Applied Physics A: Materials Science & Processing》2011,103(4):1173-1177
In this study, the ferroelectricity of as-deposited Bi3.9La0.1Ti2.9V0.1O12 (BLTV), Bi3.9Ti2.9V0.1O12 (BTV), and Bi4Ti3O12 (BIT) thin films was prepared and compared by rf magnetron sputtering technology. For the BLTV, BTV, and BIT thin films deposited
on Pt/Ti/SiO2/Si and SiO2/Si substrate, the physical and electrical characteristics of lanthanum doped BTV (BLTV) were better than those of BIT and
BTV thin films. Regarding the physical properties, the micro-structure of as-deposited BTV and BLTV thin films were obtained
and compared by XRD patterns and SEM images. The BLTV and BTV thin films were also exhibited clear the ferroelectricity. The
remanent polarization (P
r
) of as-deposited BLTV thin films was 11 μC/cm2 as the measured frequency of 100 kHz. It was higher than those of BTV thin films. Finally, the polarization of BLTV thin
film capacitor decreased by 9%, while that of the BTV decreased by 15% after the fatigue test with 109 switching cycles. 相似文献
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Jen-Hwan Tsai 《Journal of luminescence》2010,130(10):1680-1686
In this paper, a shift in the photoluminescence (PL) peak from blue to near-infrared region was observed in the Si+-implanted 400-nm-thick SiO2 films with the rapid thermal annealing (RTA) method only. As the Si+-fluence was 1×1016 ions/cm2, a blue band was observed in the films after RTA at 1050 °C for 5 s in dry-N2 atmosphere; then, the band shifted from blue to orange upon increasing the holding temperature of RTA to 1250 °C in the films after the isochronal RTA in dry N2. Furthermore, while the fluence was increased to 3×11016 ions/cm2 and the holding temperature was at the same range between 1050 and 1250 °C, the PL peak occurred between red and near-infrared regions. Although the RTA and conventional thermal annealing (CTA) methods produce a similar mechanism, the CTA method needs a much longer annealing-time and a higher Si+-implanted dose than the RTA method for producing the same shift and intensity of PL peak from the as-implanted sample. Therefore, the RTA method can produce the mechanism in the Si+-implanted sample with the PL energy between blue and near-infrared band in place of the CTA method. 相似文献
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In this study, we propose a system for determining the curvature of a material surface by a collimated Gaussian laser beam (CGLB) as the test light source. We will demonstrate that the measuring level can be improved and the experimental procedure can be reduced. The spot-radius of the test beam is nearly a constant and it is independent of the swing of the spot intensity. The proposed system can decrease the optical path-length and has the higher sensitivity and accuracy than the test system by using a Gaussian laser beam (GLB). 相似文献
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Kai-Huang Chen Chin-Hsiung Liao Jen-Hwan Tsai Sean Wu 《Applied Physics A: Materials Science & Processing》2013,110(1):211-216
In this study, the electrical conduction and bipolar switching properties in transparent vanadium oxide thin films are investigated and discussed. (110)-oriented vanadium oxide thin films were well deposited onto transparent ITO substrates for the possible development of applications in the structure of system-on-panel devices. For the as-deposited vanadium oxide thin films, they were prepared for 1 h by a rf magnetron sputtering method of rf power 130 W, chamber pressure 10 mTorr, substrate temperature 550 °C, and different oxygen concentrations. In addition, the Al/V2O5/ITO device presents reliable and bipolar switching behavior. The on/off ratio and switching cycling of two stable states are found and discussed. We suggest that the current–voltage characteristics are governed by ohmic contact and Poole?Frankel emission transport model mechanisms in low- and high-voltage regions, respectively. 相似文献
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