Europium‐Doped Mesoporous Titania Thin Films: Rare‐Earth Locations and Emission Fluctuations under Illumination

Herein, Eu^III‐doped 3D mesoscopically ordered arrays of mesoporous and nanocrystalline titania are prepared and studied. The rare‐earth‐doped titania thin films—synthesized via evaporation‐induced self‐assembly (EISA)—are characterized by using environmental ellipsoporosimetry, electronic microscopy (i.e. high‐resolution scanning electron microscopy, HR‐SEM, and transmission electron microscopy, HR‐TEM), X‐ray diffraction, and luminescence spectroscopy. Structural characterizations show that high europium‐ion loadings can be incorporated into the titanium‐dioxide walls without destroying the mesoporous arrangement. The luminescence properties of Eu^III are investigated by using steady‐state and time‐resolved spectroscopy via excitation of the Eu^III ions through the titania host. Using Eu^III luminescence as a probe, the europium‐ion sites can be addressed with at least two different environments within the mesoporous framework, namely, a nanocrystalline environment and a glasslike one. Emission fluctuations (⁵D₀→⁷F₂) are observed upon continuous UV excitation in the host matrix. These fluctuations are attributed to charge trapping and appear to be strongly dependent on the amount of europium and the level of crystallinity.     

Study of structural and electronic transport properties of Ce-doped LaMnO3

The structural and electronic transport properties of La_1−x Ce _x MnO₃ (x=0.0–1.0) have been studied. All the samples exhibit orthorhombic crystal symmetry and the unit cell volume decreases with Ce doping. They also make a metal-insulator transition (MIT) and transition temperature increases with increase in Ce concentration up to 50% doping. The system La_0.5Ce_0.5MnO₃ also exhibits MIT instead of charge-ordered state as observed in the hole doped systems of the same composition.     

Synthesis and characterization of single- and co-doped SnO2 thin films for optoelectronic applications

Doped SnO₂ thin films have been prepared by sputtering from two different targets: antimony doped tin oxide (ATO) and antimony and zinc doped tin oxide (AZTO). In the case of ATO ceramic, the antimony amount only reaches 0.012 mol per formula unit due to its evaporation at high temperature while the presence of Zn²⁺ in AZTO prevents the antimony evaporation, greatly enhances the ceramic density and allows the deposition of thin films with a high deposition rate. Both types of thin films have a dense morphology with a smooth surface and they are polycrystalline. For post-annealed ATO thin films, the Drude model was applied to deduce the carrier concentration, the optical mobility as well as the resistivity. The carrier concentration is around ten times higher for ATO thin films compared to AZTO. The two combined effects (higher carrier concentration and mobility) for ATO thin films doped with 1.2% of Sb lead to the best optoelectronic performances, confirming previous results obtained with ceramics. Nevertheless, we have a better opportunity to modulate the conductivity in the case of AZTO thin films.     

Two connected inverse spectral transforms

We establish a transformation which connects the potentials of the one-dimensional Dirac and Klein-Gordon operators. This transformation links the solutions of the nonlinear evolution equations solvable by means of the two inverse spectral transforms which use the Dirac and Klein-Gordon direct and inverse spectral problems.