Magnetotransport and magnetic properties of InAs/Mn digital alloys

We have investigated the magnetic and magneto-transport properties of a systematic sequence of five InAs/Mn digital alloys grown by a combination of molecular beam epitaxy and atomic layer epitaxy. The samples consist of 30 periods of Mn fractional monolayers (ML) (0.17–0.5 ML) separated by 14 ML thick InAs spacer layers in a superlattice configuration. Four samples show n-type electrical conduction while the fifth (0.25 ML Mn) is p-type. Squid magnetization measurements performed on these samples show remnant magnetization above room temperature, which is apparently related to a second phase.     

The dependence of the lattice parameter and density of Zn1−xMnxTe on composition

The lattice parameter of the diluted magnetic semiconductor Zn_1?xMn_xTe has been determined as a function of composition. This material crystallizes in the zinc-blende structure for values of x below about 0.75. The results show that for this range of composition the lattice parameter satisfies Vegard's law and is given by a(x) = (6.103 + 0.237x) Å. This result corrects earlier published values of a(x) for this material (Juza et al., Z. anorg. allg. Chem.285, 61 (1956)), which are in considerable error. Because of its rather pronounced dependence on x, the lattice parameter provides an excellent method for determining sample composition. By extrapolating the expression of a(x) to x = 1, the results also provide a value of 6.340 ± 0.005 Å for the lattice parameter of the hypothetical zinc-blende phase of pure MnTe. The strong dependence of the lattice parameter of Zn_1?xMn_xTe on x is responsible for most of the variation of its density with composition.     

Magnetic scattering of spin polarized carriers in (In, Mn)Sb dilute magnetic semiconductor

Magnetoresistance measurements on the magnetic semiconductor (In, Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn2+ ions located outside the ferromagnetically ordered regions when the system is below T(c). A model is proposed, based on the p-d exchange between spin-polarized charge carriers and localized Mn2+ ions, which accounts for the observed behavior both below and above the ferromagnetic phase transition. The suggested picture is further verified by high-pressure experiments, in which the degree of magnetic interaction can be varied in a controlled way.