Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)     

Thermal conductivity and specific heat of amorphous Zr0.67Ni0.33 after structural relaxation

Low-temperature measurements of the thermal conductivity (0.3KT5K) and of the specific heatC (0.07KT3.5K) of splat-cooled amorphous superconducting Zr_0.67Ni_0.33(T _c 2.7K) after different annealing stages are reported. increases progressively (up to 55%) after annealing. An analysis of with the help of normal-state measurements belowT _c in an overcritical field shows that the phonon-electron scattering remains unaltered after annealing. Hence the increase in must be entirely attributed to structure-induced (intrinsic) scattering, i.e. by two-level tunneling states (TLS) at low temperatures (T1K). The specific heat shows a small decrease aboveT _c (by 8%) which is attributed to a small diminution of the electronic density of states at the Fermi level and to a small increase in the Debye temperature. ForTT _c where TLS dominate, the specific heatC decreases less upon annealing than expected from the increase of in the standard tunneling model. This points to a change in the TLS relaxation time spectrum upon annealing, as observed previously for Zr _x Cu_1–x glasses.     

The μSR facilities at PSI

TheSR Facility Instruments presently available at PSI and the envisaged medium- and long-term developments are presented. The plans focus on further upgrades of the existing instruments and the development of new techniques using the very high fluxes becoming available at PSI, in particular the setup of a beamline with a fast kicker for muons on request (MORE) and the development of very low energy muon beams.     

Incoherent tunnelling of positive muons and trapping by vacancies in electron-irradiated aluminium

We have measured the transverse spin relaxation of positive muons ⁺ in Al single crystals after irradiation at 150 K with 3 MeV electrons. The relaxation functions agree with those expected for diffusion-limited trapping of the ⁺ in monovacancies. Between 215 K and 60 K the ⁺ diffusivity is well described by the Flynn-Stoneham law (multi-phonon incoherent tunnelling between ground states) with an activation enthalpyH _a = (30±2) meV. At lower temperatures, few-phonon (in particular one-phonon) processes become important. The decrease of the vacancy concentration by a factor of 100 during annealing between 227 K and 267 K has been studied.     

Magnetic moment relaxation of a shallow acceptor center in heavily doped silicon

Results of studying the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium (9×10 ¹⁹ cm ^?3 ) and boron (4.1×10 ¹⁸ , 1.34×10 ¹⁹ , and 4.9×10 ¹⁹ cm ^?3 ) impurities are presented. It is found that, similarly to n-and p-type silicon samples with impurity concentrations up to ～10 ¹⁷ cm ^?3 , the relaxation rate ν of the magnetic moment of a _μ Al acceptor in silicon with a high impurity concentration of germanium (9×10 ¹⁹ cm ^?3 ) depends on temperature as ν～T ^q , q≈3 at T=(5–30) K. An increase in the absolute value of the relaxation rate and a weakening of its temperature dependence are observed in samples of degenerate silicon in the given temperature range. Based on the experimental data obtained, the conclusion is made that the spin-exchange scattering of free charge carriers makes a significant contribution to the magnetic moment relaxation of a shallow acceptor center in degenerate silicon at T?30 K. Estimates are obtained for the effective cross section of the spin-exchange scattering of holes (σ _h ) and electrons (σ _e ) from an Al acceptor center in Si: σ _h ～10^?13 cm² and σ _e ～8×10^?15 cm² at the acceptor (donor) impurity concentration n _a (n _d )～4×10¹⁸ cm^?3.     

Measurements of the magnetic moment of the negative muon in the bound state in various atoms

The magnetic moment of the negative muon in the 1s state was measured in carbon, oxygen, magnesium, silicon, sulfur, and zinc. The attained precision of measurements allowed the dependence of the relativistic correction to the magnetic moment of the bound muon on the charge of the nucleus to be verified.