Even denominator filling factors in the thermoelectric power of a 2DEG

We have investigated the interaction of phonons with a 2DEG in the FQH regime with phonon drag thermoelectric power (TEP). We find that the TEP at filling factors with the same even denominator is identical and at other even denominator filling factors they differ only by a constant. Assuming these states to be Composite Fermions (CF), we can explain our observations by extending a zero magnetic field theory for phonon drag to the CF-phonon interaction. This analysis is further corroborated by the observed T⁴ dependence of the CF TEP.     

Bose condensation of excitons in two-layer electronic systems in the absence of magnetic field

A high narrow peak of interlayer differential tunnel conductivity is observed at low temperatures in heterostructures with two closely located electronic layers in the absence of magnetic field. The analysis of experimental results suggests that this peak is due to the interlayer phase coherence that arises in the system as a result of the Bose condensation of interlayer excitons (electron-hole pairs) belonging to different layers, in accordance with the recent theoretical predictions.     

Carrier hopping in InAs/AlyGa1−yAs quantum dot heterostructures: effects on optical and laser properties

The optical properties of InAs/Al_yGa_1−yAs self-assembled quantum dots are studied as a function of temperature from 10 K to room temperature. The temperature dependence of carrier hopping between dots is discussed in terms of the depth of the dot confinement potential and the dispersion in dot size and composition. We show that carrier hopping between dots influences both the electrical and optical properties of laser devices having dots as active medium.     

In-situ electrical characterisation of a photodiode during nano-structuring with a focussed ion beam

We study the fabrication and power conversion efficiency of GaAs photodiodes, which have been nano-structured and covered with colloidal quantum dots. A focussed ion beam is used to etch vertical channels into the photodiodes and the detrimental effects of this treatment are characterised in-situ during the fabrication process. A novel experimental configuration allows the electrical characterization of the photodiodes under laser illumination during the nano-fabrication process and reveals the gradual decrease of the photodiodes’ shunt resistance with increasing laterally revealed surface along the etched channels. This is interpreted as evidence for leakage currents through redeposited material and surface states on the lateral channel surface. After the fabrication step the channels are filled with colloidal quantum dots, which upon absorption of light transfer electronic excitations to the photodiode via resonance energy transfer. It is found that after the addition of quantum dots the nano-structured photodiodes show larger enhancements of the energy conversion efficiency under simulated solar irradiance than the pristine photodiodes. Nevertheless, the device degradation induced by the ion beam treatment itself cannot be compensated for.     

Effect of inter-miniband tunneling on current resonances due to the formation of stochastic conduction networks in superlattices

We study the effects of inter-miniband electron tunneling and electric field domains on the current–voltage and conductance–voltage curves of biased semiconductor superlattices under the action of a magnetic field that is tilted relative to the plane of the layers. For this geometry, electrons in the superlattice minibands exhibit a unique type of stochastic semiclassical motion. At certain critical values of the electric field within the superlattice layers, the stochastic trajectories change abruptly from fully localized to completely unbounded, and map out an intricate web-like mesh of conduction channels in phase space. Delocalization of the electron paths produces a series of strong resonant peaks in the electron drift velocity versus electric field curves. We use these drift velocity characteristics to make self-consistent drift-diffusion calculations of the current–voltage and differential conductance–voltage curves of the superlattices, which reveal strong resonant features originating from the sudden delocalization of the stochastic single-electron paths. We show that this delocalization has a pronounced effect on the distribution of space charge and electric field domains within the superlattices. Inter-miniband tunneling greatly reduces the amount of space-charge buildup, thus enhancing the domain structure and both the strength and number of the current resonances.