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Fe2O3--V2O5 catalysts doped with Cs2SO4 (molar ratio: V:Fe:Cs=1:0.74:0.06) were found to be a rather inhomogeneous mixture of various crystalline and amorphous iron
vanadate phases. After calcination in air the catalyst was divided into three different parts which were analyzed separately
revealing the formation of FeVO4 in the top and bottom fraction of the crucible and Fe2V4O13 in the middle fraction. As compared to the well crystallized FeVO4 reference sample, the quadrupole splittings of FeVO4 in the Cs-doped catalysts were larger pointing to more distorted iron sites which were assumed to be responsible for high
catalytic selectivities. In contrast, the quadrupole splittings of FeVO4 in the less selective K- and Rb-doped Fe2O3--V2O5 catalysts were smaller. Additional components in the bottom fraction were also α-Fe2O3 and Fe1-xS. As indicated by the CEMS spectra the latter is located preferentially on the surface of the catalyst particles.
This revised version was published online in August 2006 with corrections to the Cover Date. 相似文献
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Ronny Kleinhempel Gunar Kaune Matthias Herrmann Hartmut Kupfer Walter Hoyer Frank Richter 《Mikrochimica acta》2006,156(1-2):61-67
Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy
target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural,
electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition
rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min−1 could be achieved. This corresponds to a static deposition rate of 200 nm min−1. The lowest electrical resistivity of 1.1·10−3 Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency
in the visible range corresponding to extinction coefficients being below 10−2. X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition
mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222)
oriented. Compared to undoped In2O3 all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown
in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress
in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa. 相似文献