Peculiarities of the giant injection magnetoresistance in the Ni-polymer-Cu system

The contribution of spin-polarized electrons, injected from a ferromagnet to a polymer, to the giant magnetoresistance has been investigated for the ferromagnet-polymer-nonmagnetic metal system. It is established that, at complete depolarization of injected electrons, magnetic field does not affect the conductivity of the system. The electric field effect (significant decrease in the threshold magnetic field) on the parameters of giant injection magnetoresistance is established.     

Origin of Electric Field Dependence of the Charge Mobility and Spatial Energy Correlations in C60-Based Field Effect Transistors

We report on the influence of the lateral electric field on the charge mobility in organic field-effect transistors (OFET) based on C₆₀ films with multigrain morphology. The experimental data were quantitatively described using a recent analytical model by accounting for the strong local electric fields in a multigrain transistor channel and for the energy correlation effects. To rationalize the presence of a correlated disorder in a non-polar C₆₀ material, we show that randomly oriented permanent dipoles in organic gate dielectric layers can generate a significant dipolar disorder in an adjacent nonpolar semiconductor layer.     

Electric field confinement effect on charge transport in organic field-effect transistors

While it is known that the charge-carrier mobility in organic semiconductors is only weakly dependent on the electric field at low fields, the experimental mobility in organic field-effect transistors using silylethynyl-substituted pentacene is found to be surprisingly field dependent at low source-drain fields. Corroborated by scanning Kelvin probe measurements, we explain this observation by the severe difference between local conductivities within grains and at grain boundaries. Redistribution of accumulated charges creates very strong local lateral fields in the latter regions. We further confirm this picture by verifying that the charge mobility in channels having no grain boundaries, made from the same organic semiconductor, is not significantly field dependent. We show that our model allows us to quantitatively model the source-drain field dependence of the mobility in polycrystalline organic transistors.     

Negative field-dependent charge mobility in crystalline organic semiconductors with delocalized transport

Charge-carrier mobility has been investigated by time-of-flight (TOF) transient photocurrent in a lateral transport configuration in highly crystalline thin films of 2,7-dioctyl[1]benzothieno [3,2-b][1] benzothiophene (C₈-BTBT) grown by a zone-casting alignment technique. High TOF mobility has been revealed that it is consistent with the delocalized nature of the charge transport in this material, yet it featured a positive temperature dependence at \( T \ge 295\,{\text{K}} \). Moreover, the mobility was surprisingly found to decrease with electric field in the high-temperature region. These observations are not compatible with the conventional band-transport mechanism. We have elaborated an analytic model based on effective-medium approximation to rationalize the puzzling findings. The model considers the delocalized charge transport within the energy landscape formed by long-range transport band-edge variations in imperfect organic crystalline materials and accounts for the field-dependent effective dimensionality of charge transport percolative paths. The results of the model calculations are found to be in good agreement with experimental data.     

S-shaped current bistability in a bipolar resonant tunneling diode

The bipolar tunneling transport through p–i–n double barrier structures has been studied by means of simultaneous electrical transport measurements and electroluminescence spectroscopy. An “inverted” hysteresis loop is observed at the onset of the first electronic resonance in the current–voltage characteristics with an electrical ON/OFF ratio of more than two orders of magnitude. Relating the different branches of the current–voltage characteristic to the space charges accumulated throughout the structure the inverted hysteresis loop is interpreted in terms of an S-shaped current bistability. The S-shaped current bistability is similar to the current driven negative differential resistivity as known for instance from thyristor action. This analogy between the bipolar double barrier structure with alloyed n-type emitter and the thyristor will be briefly discussed.