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Ji-Yao Li Biaoxin Chai Weizhen Zhang Xiaobin Wu Chao Zhang Danielle Fritze Zefeng Xia Cam Patterson Michael W Mulholland 《BMC neuroscience》2011,12(1):1-10
Background
Cigarette smoking enhances the risk of stroke. However, the underlying molecular mechanisms are largely unknown. The present study established an in vivo rat secondhand cigarette smoking (SHS) model and examined the hypothesis that SHS upregulates endothelin receptors with increased cerebrovascular contraction via the Raf/extracellular signal-regulated kinase (ERK)/mitogen-activated protein kinases (MAPK) pathway.Results
Rats were exposed to SHS for up to 8 weeks. The cerebral artery vasoconstriction was recorded by a sensitive myograph. The mRNA and protein expressions for endothelin receptors in cerebral arteries were studied by real-time PCR and Western blot. Compared to fresh air exposed rats, cerebral arteries from SHS rats exhibited stronger contractile responses (P < 0.05) mediated by endothelin type A (ETA) receptors. The expressions of mRNA and protein for ETA receptors in the cerebral arteries from SHS rats were higher (P < 0.05) than that in control. SHS did not affect endothelin type B (ETB) receptor-mediated contractions, mRNA or protein levels. The results suggest that SHS upregulates ETA, but not ETB receptors in vivo. After SHS exposure, the mRNA levels of Raf-1 and ERK1/2, the protein expression of phosphorylated (p)-Raf-1 and p-ERK1/2 were increased (P < 0.05). Raf-1 inhibitor, GW5074 suppressed the enhanced ETA receptor-mediated contraction, mRNA and protein levels induced by SHS. In addition, GW5074 inhibited the SHS-caused increased mRNA and phosphorylated protein levels of Raf-1 and ERK1/2, suggesting that SHS induces activation of the Raf/ERK/MAPK pathway.Conclusions
SHS upregulates cerebrovascular ETA receptors via the Raf/ERK/MAPK pathway, which provides novel understanding of mechanisms involved in SHS-associated stroke. 相似文献5.
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C. Nenstiel M. Bügler G. Callsen F. Nippert T. Kure S. Fritze A. Dadgar H. Witte J. Bläsing A. Krost A. Hoffmann 《固体物理学:研究快报》2015,9(12):716-721
We present an experimental study about the influence of Si and Ge doping in GaN with focus on the occurring strain levels and overall crystalline quality. Extremely high quality samples were examined by means of Raman spectroscopy, demonstrating effective, n‐type doping concentrations up to the 5 × 1019 cm–3 regime. By studying the full width at half maximum (FWHM) of the E2(high) Raman mode with rising doping concentration, Ge is approved as the by far superior dopant if compared to Si. Even elevated nominal Ge concentrations yield corresponding FWHM values of just 3 cm–1, a most competitive value even for bare bulk GaN samples. At the same time, the biaxial, compressive stress that is introduced by such high Ge doping amounts to just 0.2 GPa, in clear contrast to the particular case of silicon. Here, even moderate doping levels lead to tensile stress up to 1 GPa and consequently to a serious degeneration of the overall crystal quality as approved by our Raman analysis. Additionally, the examined high doping concentrations enable the observation of longitudinal optical phonon plasmon (LPP) modes in the Raman spectra, which serve as a direct tool for the determination of the effective doping concentration. A careful analysis of the LPP coupling at cryogenic and room temperature yields within the error interval identical free carrier concentrations in all germanium doped samples, pointing towards an energetically shallow nature of the dopant. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
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Laser-fabricated glass microlens arrays 总被引:2,自引:0,他引:2
We report the fabrication of large, laser-formed refractive microlens arrays on doped borosilicate glass. Tuning the laser heat-source properties was found to give precise control over the melt process and the resulting lenslet geometries. Measurements of focal length, index, and surface shapes show excellent uniformity across these arrays. 相似文献
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