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V.H. Etgens M. Sauvage-Simkin R. Pinchaux J. Massies N. Jedrecy A. Waldhauer N. Greiser 《Surface science》1994,320(3):252-258
The transition between the arsenic saturated c(4 × 4) and the As stabilised 2 × 4 reconstructed GaAs(001) surfaces has been followed in situ on a UHV grazing incidence X-ray diffractometer stage. X-ray diffraction lines specific of either structure have been recorded as a function of temperature. The intensity and lineshape evolution has enabled to propose a model for the transformation involving a homogeneous disordering of the c(4 × 4) surface through random As desorption followed by nucleation and growth of 2 × 4 domains. Under UHV conditions, the irreversible transition is observed over a temperature interval ranging from 330°C to 380°C. 相似文献
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The magnetic properties of Fe/Zn/Fe trilayers have been studied by ferromagnetic resonance and magnetization measurements. These measurements have been used to investigate the magnetic anisotropy of the iron layers and the magnetic coupling across the semiconductor spacer. The angular dependence of the resonance spectra has been measured in-plane and out-of-plane in order to deduce magnetic anisotropy constants of the samples. Experimental data were fitted by using an energy-density expression that includes bulk cubic anisotropy, growth-induced uniaxial in-plane anisotropy and perpendicular-surface anisotropy terms. A small ferromagnetic coupling is observed in the trilayers with spacer thickness up to
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N. Jedrecy M. Sauvage-Simkin R. Pinchaux J. Massies N. Greiser V.H. Etgens 《Surface science》1990,230(1-3):197-204
The atomic structures of the clean Si(001) and As/Si(001)2 × 1, 1 × 2 reconstructed surfaces prepared in situ have been obtained by grazing incidence X-ray diffraction under ultra high vacuum. In the former case an asymmetric dimer inclined by 7.4° on the surface plane with a slightly contracted dimer bond length (−1.5% compared to the bulk value) has been indentified as the structural basis, whereas a symmetric dimer is found after adsorption of one monolayer of As at 350 ° C. The induced displacements in the first subsurface silicon layer have been derived in both cases. These results are compatible with the models proposed on the basis of spectroscopic and direct imaging methods. 相似文献
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Tacchi S Gr?n?s O Stollo A Madami M Gubbiotti G Carlotti G Marangolo M Eddrief M Etgens VH Yadav MK Nordstr?m L Sanyal B 《J Phys Condens Matter》2012,24(23):236006
It is well known that Fe films deposited on a c(2 × 2)-reconstructed ZnSe(001) surface show a strong in-plane uniaxial magnetic anisotropy. Here, the effect of the substrate reconstruction on the magnetic anisotropy of Fe has been studied by in situ Brillouin light scattering. We found that the in-plane uniaxial anisotropy is strongly reduced for Fe films grown on a (1 × 1)-unreconstructed ZnSe substrate while the in-plane biaxial one is nearly unaffected by the substrate reconstruction. Calculations of magnetic anisotropy energies within the framework of ab initio density functional theory reveal that the strong suppression of anisotropy at the (1 × 1) interface occurs due to complex atomic relaxations as well as the competing effects originating from magnetocrystalline anisotropy and dipole-dipole interactions. For both sharp and intermixed c(2 × 2) interfaces, the magnetic anisotropy is enhanced compared to the (1 × 1) case due to the further lowering of symmetry. The theoretical results are in agreement with the experimental findings. 相似文献
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Etgens VH de Camargo PC Eddrief M Mattana R George JM Garreau Y 《Physical review letters》2004,92(16):167205
Magnetic and structural properties of CrAs epilayers grown on GaAs(001) by molecular beam epitaxy have been studied. CrAs epilayers are orthorhombic for all thicknesses investigated but show a structural transition from a metastable phase for very thin films, to the usual bulk MnP-type orthorhombic phase at higher thicknesses. At intermediate thicknesses, there is a predominance of the new phase, although a contribution from the usual CrAs bulk phase remains clearly present. These results strongly suggest that the ferromagnetic signal measured at room temperature comes from the new metastable orthorhombic structure with an expanded b-axis induced by the substrate strain. 相似文献
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G. Alejandro J. Milano L.B. Steren J.E. Gayone M. Eddrief V.H. Etgens 《Physica B: Condensed Matter》2012,407(16):3161-3164
We have studied different aspects of the magnetic behavior of Fe(5 nm)/MnAs(100 nm) bilayers epitaxially grown on GaAs(1 0 0). Ferromagnetic resonance (FMR) measurements were performed in order to characterize the magnetic anisotropies of the films and the interlayer coupling between them. The chemical composition of the interface was investigated by X-ray photoemission spectroscopy (XPS). 相似文献
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Garcia V Jaffrès H George JM Marangolo M Eddrief M Etgens VH 《Physical review letters》2006,97(24):246802
We propose an analytical model of spin-dependent resonant tunneling through a 3D assembly of localized states (spread out in energy and in space) in a barrier. An inhomogeneous distribution of localized states leads to resonant tunneling magnetoresistance inversion and asymmetric bias dependence as evidenced with a set of experiments with MnAs/GaAs(7-10 nm)/MnAs tunnel junctions. One of the key parameters of our theory is a dimensionless critical exponent beta scaling the typical extension of the localized states over the characteristic length scale of the spatial distribution function. Furthermore, we demonstrate, through experiments with localized states introduced preferentially in the middle of the barrier, the influence of an homogeneous distribution on the spin-dependent transport properties. 相似文献
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Garcia V Sidis Y Marangolo M Vidal F Eddrief M Bourges P Maccherozzi F Ott F Panaccione G Etgens VH 《Physical review letters》2007,99(11):117205
The alpha-beta magnetostructural phase transition in MnAs/GaAs(111) epilayers is investigated by elastic neutron scattering. The in-plane parameter of MnAs remains almost constant with temperature from 100 to 420 K, following the thermal evolution of the GaAs substrate. This induces a temperature dependent biaxial strain that is responsible for an alpha-beta phase coexistence and, more importantly, for the stabilization of the ferromagnetic alpha phase at a higher temperature than in the bulk. We explain the premature appearance of the beta phase at 275 K and the persistence of the ferromagnetic alpha phase up to 350 K with thermodynamical arguments based on the MnAs phase diagram. It results that the biaxial strain in the hexagonal plane is the key parameter to extend the ferromagnetic phase well over room temperature. 相似文献