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1.
The temperature dependence of the switching frequency of a microwave-induced spontaneous electric field forming a domain structure and the conductance of a doping layer that provides electrons to the two-dimensional electron system have been measured on samples fabricated from the same GaAs/AlGaAs heterostructure. Both quantities have been found to obey the thermally activated dependence (Arrhenius law) with close activation energies. This result indicates a relation between the quantities and confirms a hypothesis that the observed dynamics of the domain structure originates from the dynamical screening of the spontaneous electric field of domains by charges in the doping layer. 相似文献
2.
Gribenyukov A. I. Dorozhkin K. V. Morozov A. N. Suslyaev V. I. 《Russian Physics Journal》2018,60(11):2000-2003
Russian Physics Journal - Results of investigations are presented of the THz spectra of the refractive index n(v) and of the extinction coefficient k(v) for ZnGeP2 single crystals with different... 相似文献
3.
The increase of the ratio of H0/Hc is experimentally foound to result in changing the configuration and motion of the normal and superconducting regions in the layer. 相似文献
4.
D. Golberg P.S. Dorozhkin Y. Bando Z.-C. Dong C.C. Tang Y. Uemura N. Grobert M. Reyes-Reyes H. Terrones M. Terrones 《Applied Physics A: Materials Science & Processing》2003,76(4):499-507
Transport and field-emission properties of as-synthesized CNx and BNCx (x<0.1) multi-walled nanotubes were compared in detail. Individual ropes made of these nanotubes and macrofilms of those
were tested. Before measurements, the nanotubes were thoroughly characterized using high-resolution and energy-filtered electron
microscopy, electron diffraction and electron-energy-loss spectroscopy. Individual ropes composed of dozens of CNx nanotubes displayed well-defined metallic behavior and low resistivities of ∼10–100 kΩ or less at room temperature, whereas
those made of BNCx nanotubes exhibited semiconducting properties and high resistivities of ∼50–300 MΩ. Both types of ropes revealed good field-emission
properties with emitting currents per rope reaching ∼4 μA(CNx) and ∼2 μA (BNCx), albeit the latter ropes se- verely deteriorated during the field emission. Macrofilms made of randomly oriented CNx or BNCx nanotubes displayed low and similar turn-on fields of ∼2–3 V/μm. 3 mA/cm2 (BNCx) and 5.5 mA/cm2 (CNx) current densities were reached at 5.5 V/μm macroscopic fields. At a current density of 0.2–0.4 mA/cm2 both types of compound nanotubes exhibited equally good emission stability over tens of minutes; by contrast, on increasing
the current density to 0.2–0.4 A/cm2, only CNx films continued to emit steadily, while the field emission from BNCx nanotube films was prone to fast degradation within several tens of seconds, likely due to arcing and/or resistive heating.
Received: 29 October 2002 / Accepted: 1 November 2002 / Published online: 10 March 2003
RID="*"
ID="*"Corresponding author. Fax: +81-298/51-6280, E-mail: golberg.dmitri@nims.go.jp 相似文献
5.
The photoresponse of magnetoresistance of a high-density two-dimensional electron system to microwave electromagnetic radiation is studied. The damping of the Shubnikov-de Haas oscillation by radiation with a non-monotonic dependence of this effect on the magnetic field and the radiation-induced oscillations of magnetoresistance are observed. The damping is most pronounced within isolated narrow magnetic field intervals that closely correspond to the expected positions of magnetoplasma resonances in the sample under study and also near the cyclotron resonance position. A “window” is observed in the photoresponse near the field value predicted on the basis of a single-particle electron spectrum consisting of broadened Landau levels. The radiation-induced oscillations, the window in the photoresponse, and the damping of the Shubnikov-de Haas oscillations near the cyclotron resonance are described in terms of the theory based on the concept of the nonequilibrium filling of single-electron states. Thus, it is demonstrated that the photoresponse pattern observed in the experiment is formed by both single-particle and collective (magnetoplasma) effects. 相似文献
6.
S. S. Kharintsev G. G. Hoffmann J. Loos G. de With P. S. Dorozhkin M. Kh. Salakhov 《Journal of Experimental and Theoretical Physics》2007,105(5):909-915
The resolution capabilities of near-field Raman spectroscopy based on a giant enhancement of the electric field near a nanosized metal probe are studied. As a test sample, bundles of single-walled carbon nanotubes deposited on glass substrates are used. It is shown that this method ensures a subwavelength spatial resolution of about 50 nm and demonstrates a Raman scattering enhancement of the order of 104. 相似文献
7.
The formation of regions of compressible and incompressible phases in the quantum Hall effect regime has been considered for a two-dimensional (2D) electron system that is created in a field-effect transistor. This effect arises from long-period fluctuations of the density of ionized donors supplying electrons to the 2D system. It is shown that the motion of these regions caused by variations of the average electron density gives rise to minima in the capacitance of the capacitor formed by the 2D electron system and the transistor gate. When the corrections to the capacitance are small, the shape of the minima reproduces the donor density distribution function. Experimental data are presented that demonstrate good agreement with the predictions of the model. 相似文献
8.
A great number of publications devoted to the physicochemical principles of the operation of acoustic wave chemical sensors for gases, the state of the art, and the prospects for further development were surveyed and analyzed. 相似文献
9.
10.
S. I. Dorozhkin 《JETP Letters》2016,103(8):513-517
Precise measurements of the magnetic-field and gate-voltage dependences of the capacitance of a field-effect transistor with an electron system in a wide GaAs quantum well have been carried out. It has been found that the capacitance minima caused by the gaps in the Landau spectrum of the electron system become anomalously wide when two size-quantization subbands are occupied. The effect is explained by retention of the chemical potential in the gap between the Landau levels of one of the subbands owing to redistribution of electrons between the subbands under a change in the magnetic field. The calculation taking into account this redistribution has been performed in a model of the electron system formed by two two-dimensional electron layers. The calculation results describe both the wide capacitance features and the observed disappearance of certain quantum Hall effect states. 相似文献