Study of the reactione + e −→K + K − in the energy range1350 \leqq \sqrt s \leqq 2400 MeV

Thee ⁺ e ^?→K ⁺ K ^? cross section has been measured from about 750 events in the energy interval \(1350 \leqq \sqrt s \leqq 2400 MeV\) with the DM2 detector at DCI. TheK ^± form factor |F _F ^±| cannot be explained by the ρ, ω, ? and ρ′(1600). An additional resonant amplitude at 1650 MeV has to be added as suggested by a previous experiment.     

EFFECTS OF INTENSITY AND FLUENCE UPON DNA SINGLE-STRAND BREAKS INDUCED BY EXCIMER LASER RADIATION

Abstract— A Xenon-chloride excimer laser emitting energy at 308 nm was used to induce single-strand breaks (SSBs, frank breaks plus alkali-labile lesions as assayed by alkaline sucrose sedimentation techniques) in purified DNA from Bacillus subtilis . A fluence response study and a peak pulse intensity study were performed. At a pulse energy of 0.1 mJ/pulse, the radiation induced SSBs in a linear fashion (91 SSB/10⁸ Da per MJ/m²) to a maximum exprimental fluence of 1.28 MJ/m². The pulse intensity study showed that there were no significant changes in DNA breakage (105 SSB/10⁸ Da) between 2.93 times 10⁹ and 5.86 times 10¹¹ W/m² (0.11 and 22.0 mJ/pulse) at a constant total fluence of 1.1 MJ/m² (27000 mJ dose). This study has verified and extended previous work by quantifying the yield of SSBs induced in DNA by this laser radiation.     

Absorption spectra of diatomic molybdenum nitride (MoN), molybdenum oxide (MoO), and molybdenum dimer (Mo2) molecules isolated in Ar,Ne, and Kr matrices

MoN and MoO molecules produced in a hollow cathode discharge have been trapped in Ne, Ar, and Kr matrices at 4.2 and 13 K and investigated by optical spectroscopy. Bands attributed to MoN were identified in the red and blue spectral regions and assigned by comparison with gas phase results to the A⁴π → X⁴Σ^? (a) and B⁴Σ → X⁴Σ^? (a) transitions, respectively. The ground state of Mo¹⁴N has been identified as ⁴Σ^? with ω_e = 1040 cm^?1 in an Ar matrix. Absorptions assigned to MoO in the red spectral region form the (0-0) and (1-0) bands of at least one electronic transition, but could not definitely be correlated with the gas phase results. The ground state vibrational frequency for Mo¹⁶O in an Ar matrix is 893.5 cm^?1. Additionally, Mo₂ absorptions centered at 19 305 cm^?1 were shown to be part of a vibrational progression with an average spacing of 181 cm^?1.     

Radiative decay ofJ/ψ into γ π+ π−

The radiative decayJ/ψ → γ π⁺ π^? has been studied using the 8.6 millionJ/ψ produced in the DM2 experiment at the DCIe ⁺e^? storage rings at Orsay. The π⁺ π^? mass spectrum shows a cleanf ₂ (1270) signal, and the possible presence of two other states at thef ₂ (1720) andf ₄ (2030) masses. For thef ₂ (1270), the branching ratio BR(J/ψ →γf)xBR(f→π⁺ π^?) is measured to be (7.50±0.30±1.12)×10^?4, and the spin analysis prefers theJ=2 assignment, with helicity parametersx=0.83±0.06 andy=0.01±0.06. The existence of higher mass states is discussed.     

Preparation and thermal decomposition of certain. Substituted bis-(thenoyl) peroxides

The effect of various substituents on the rates of thermal decomposition of substituted bis-(thenoyl) peroxides has been investigated. Nine unreported peroxides were prepared, including derivatives of 2- and 3-thenoic acids. The thermal decomposition rates of these peroxides were examined, in the presence of styrene as a free radical scavenger. First order kinetics were observed in all cases studied. In general it was found that electron releasing substituents increase, while electron withdrawing groups decrease, the decomposition rate; the only exception being bis-(5-nitro-3-thenoyl) peroxide. Entropies and energies of activation were determined and found to be linearly related for the peroxides studied.     

Non-planar smoulder propagation governed by diffusion

The steady propagation of a thin smouldering front in a half-spacehas been considered. A suitable coordinate transformation hasallowed the region near the leading edge of the front to beexamined for both a maintained planar surface and with surfacecollapse due to material shrinkage. The change in the oxidizerconcentration for a small increment in the propagation speedfor large time and surface collapse has been determined. Theinfluence of two types of nonlinear diffusion on the shape ofthe smouldering front has been found; other cases can be dealtwith in a similar manner.     

Carbon ad-dimer defects in carbon nanotubes

The adsorption of carbon dimers on carbon nanotubes leads to a rich spectrum of structures and electronic structure modifications. Barriers for the formation of carbon dimer induced defects are calculated and found to be considerably lower than those for the Stone-Wales defect. The electronic states introduced by the ad-dimers depend on defect structure and tube type and size. Multiple carbon ad-dimers provide a route to structural engineering of patterned tubes that may be of interest for nanoelectronics.     

Chemical grafting of biphenyl self-assembled monolayers on ultrananocrystalline diamond

We have investigated the formation of self-assembled monolayers (SAMs) of 4'-nitro-1,1-biphenyl-4-diazonium tetrafluoroborate (NBD) onto ultrananocrystalline diamond (UNCD) thin films. In contrast to the common approach to modify diamond and diamond-like substrates by electrografting, the SAM was formed from the saturated solution of NBD in acetonitrile by pure chemical grafting. Atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), and near edge X-ray absorption fine structure spectroscopy (NEXAFS) have been used to verify the direct covalent attachment of the 4'-nitro-1,1-biphenyl (NB) SAM on the diamond substrate via stable C-C bonds and to estimate the monolayer packing density. The results confirm the presence of a very stable, homogeneous and dense monolayer. Additionally, the terminal nitro group of the NB SAM can be readily converted into an amino group by X-ray irradiation as well as electrochemistry. This opens the possibility of in situ electrochemical modification as well as the creation of chemical patterns (chemical lithography) in the SAM on UNCD substrates and enables a variety of consecutive chemical functionalization for sensing and molecular electronics applications.