Enhancing optical-feedback-induced chaotic dynamics in semiconductor ring lasers via optical injection

In this paper, we investigate the possibility of using optical injection to efficiently suppress the time-delay (TD) signatures of chaotic signals in a large experimentally accessible parameter range of semiconductor ring lasers (SRLs). We also study how this optical injection can improve the signal bandwidths. The injection signal is obtained from a master SRL with either optical self- or cross-feedback. For optical self-feedback configurations, it is found that the suppression of TD signatures is similar to what has been found in injected Fabry–Perot semiconductor lasers, i.e., narrow range of parameters with respect to the detuning and injection strengths. For cross-feedback configurations, however, the TD signatures can be suppressed in a wide range of parameters; meanwhile, the bandwidths are significantly improved for the same range of parameters. This is particularly useful for the security in chaos-based communications and also for generating random bits with improved properties.     

Coherent and incoherent dynamics of excitons in semiconductor microcavities

Il Nuovo Cimento D - We have investigated the dynamics of impulsively excited planar microcavities in the strongly couple regime. With resonant, coherent excitation, the emitted light shows...     

Magnetic Bloch oscillations in nanowire superlattice rings

The recent growth of semiconductor nanowire superlattices encourages hope that Bloch-like oscillations in such structures formed into rings may soon be observed in the presence of a time-dependent magnetic flux threading the ring. These magnetic Bloch oscillations are a consequence of Faraday's law; the time-dependent flux produces an electromotive force around the ring, thus leading to the Bloch-like oscillations. In the spectroscopic domain, generalized Wannier-Stark states are found that are manifestations of the emf-induced localization of the states.     

Rabi flopping in a two-level system with a time-dependent energy renormalization: intersubband transitions in quantum wells

We obtain pulse-driven Rabi oscillations guided by a generalization of the rotating-wave approximation to include, in the optical-Bloch equations, two-level systems with a time-varying transition energy. We achieve this by using chirped pulses with the central frequency given by the time-varying transition energy. Using this approach, we predict Rabi oscillations in intersubband transitions in a two-subband n-type modulation-doped quantum well by taking into account the time-dependent intersubband energy-gap renormalization due to depolarization-shift effects. We obtain Rabi oscillations for jpi (j=0,1,2, ) pulses in the presence of dephasing.     

Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes

Electron channeling experiments performed on individually scanned, single columns of atoms show that in highly n-type Si grown at low temperatures the primary electrically deactivating defect cannot belong to either the widely accepted class of donor-vacancy clusters or a recently proposed class of donor pairs. First-principles calculations suggest a new class of defects consisting of two dopant donor atoms near a displaced Si atom, which forms a vacancy-interstitial pair. These complexes are consistent with the present experimental results, the measured open volume of the defects, the observed electrical activity as a function of dopant concentration, and the enhanced diffusion of impurities in the presence of deactivated dopants.     

Interatomic Auger transitions: A survey

A brief survey of the effects of interatomic Auger and Coster-Kronig transitions involving either the annihilation and/or ejection of electrons associated with the ligands nearest neighbor to the hole-state atom is presented. It is shown by way of example how these transitions may be used to interpret low energy Auger spectra of compound materials. Since these transitions affect the lifetime of certain core hole states, their probability should be reflected in their linewidths measured by x-ray photoelectron and x-ray emission spectroscopies. Dominant nonlifetime broadening processes generally preclude accurate determination of lifetime effects for most compounds u sing the former technique, but the latter spectroscopy may prove useful for studying such effects from the linewidths of characteristic x-rays and the intensities of multiple-hole x-ray satellite lines in certain materials.