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The pressure dependence of thelo-to phonons in InAs has been investigated by Raman scattering using the diamond anvil cell. Indium arsenide transforms, presumably
to the rock-salt structure at 70±1 kbar. The mode Grüneisen parameters for thelo-to phonons are γ
lo
=0.99±0.03, γ
to
=1.2±0.03 respectively. The effective charge,e*
T
, for InAs decreases slightly with pressure and this trend is in accordance with the behaviour of other III–V zinc blende
structured semiconductors: The structural phase transition is discussed in the light of theoretical calculations for phase
stability of III–V compounds, as well as recent high pressure x-ray diffraction studies. 相似文献
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