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排序方式: 共有4005条查询结果,搜索用时 312 毫秒
1.
Jiang Rui-Yang Xin Jia-Wei Cao Cong 《International Journal of Theoretical Physics》2021,60(8):2836-2855
International Journal of Theoretical Physics - Quantum logic gates are the foundation of circuit-based quantum computation and quantum simulation. Multi-qubit quantum controlled gates are of vital... 相似文献
2.
Kamali Ahangar Ehsan Izanlu Morteza Dolati Khakhian Shabnam Mohamad Abdulmajeed A. Bach Quang-Vu 《Journal of Thermal Analysis and Calorimetry》2021,144(6):2525-2541
Journal of Thermal Analysis and Calorimetry - Thermal microscale gas flow was simulated into a coplanar microchannel was simulated at a broad range of Knudsen numbers. Attempts were made to improve... 相似文献
3.
甲基紫掺杂聚乙烯醇薄膜材料在两束相干光照射下生成相位光栅.当改变一束相干光光程,通过监测相位光栅的一级衍射信号强度的变化,可以检测相位光栅的生长和擦除过程.在此实验基础上,讨论了甲基紫掺杂聚乙烯醇薄膜材料多重全息存储的原理与结果. 相似文献
4.
CONG Fuzhong & LI YongSchool of Mathematics Information Science Shandong Institute of Business Technology Yantai China Office of Mathematics Changchun Flight Academy of the Air Force Changchun China Department of Mathematics Jilin University Changchun China 《中国科学A辑(英文版)》2004,47(5):675-686
An effective stability result for generalized Hamiltonian systems is obtained by applying the simultaneous approximation technique due to Lochak. Among these systems, dimensions of action variables and angle variables might be distinct. 相似文献
5.
Yuri M. Boiko Anders Bach Jørgen Lyngaae-Jørgensen 《Journal of Polymer Science.Polymer Physics》2004,42(10):1861-1867
Films of amorphous polystyrene (PS) with a weight-average molecular weight (Mw) of 225 × 103 g/mol were bonded in a T-peel test geometry, and the fracture energy (G) of a PS/PS interface was measured at the ambient temperature as a function of the healing time (th) and healing temperature (Th). G was found to develop with (th)1/2 at Th = Tg-bulk − 33 °C (where Tg-bulk is the glass-transition temperature of the bulk sample), and log G was found to develop with 1/Th at Tg-bulk − 43 °C ≤ Th ≤ Tg-bulk − 23 °C. The smallest measured value of G = 1.4 J/m2 was at least one order of magnitude larger than the work of adhesion required to reversibly separate the PS surfaces. These three observations indicated that the development of G at the PS/PS interface in the temperature range investigated (<Tg-bulk) was controlled by the diffusion of chain segments feasible above the glass-transition temperature of the interfacial layer, in agreement with our previous findings for fracture stress development at several polymer/polymer interfaces well below Tg-bulk. Close values of G = 8–9 J/m2 were measured for the symmetric interfaces of polydisperse PS [Mw = 225 × 103, weight-average molecular weight/number-average molecular weight (Mw/Mn) = 3] and monodisperse PS (Mw = 200 × 103, Mw/Mn = 1.04) after healing at Th = Tg-bulk − 33 °C for 24 h. This implies that the self-bonding of high-molecular-weight PS at such relatively low temperatures is not governed by polydispersity. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 1861–1867, 2004 相似文献
6.
Andrew Bach Xinglong Jiang Joseph Mckenna Kapa Prasad Oljan Repic Wen‐Chung Shieh 《Journal of heterocyclic chemistry》2004,41(4):637-640
An efficient approach has been developed for the synthesis of an isofervenulin analogue 1 employing a one‐pot condensation‐substitution reaction of a chlorocarboethoxytriazine (electrophile) with a urea (nucleophile). The resulting cyclization reaction resulted in the synthesis of a pyrimido‐heterocycle in good yield in either acidic or basic media. The former was assisted by utilizing trimethylsilyl chloride. 相似文献
7.
采用真空熔融缓冷方法制备了单相β-Zn4Sb3以及含有过量Zn的β-Zn4Sb3块体热电材料.在300—700K的温度范围内测试了材料的电导率、Seebeck系数和热导率,研究了β-Zn4Sb3化合物中过量Zn的分布状态及其对材料热电性能的影响规律.结果表明:过量的Zn作为第二相较均匀的分布在β-Zn4Sb3的晶界上,随着Zn含量增加,材料电导率和热导率上升,Seebeck系数下降,Zn第二相的引入能有效提高材料的功率因子,Zn过量2at%的材料在700K时其ZT值达到1.10. 相似文献
8.
9.
R. Silvennoinen K. -E. Peiponen T. Asakura Yan-Fang Zhang Cong Gu K. Ikonen E. J. Morley 《Optics and Lasers in Engineering》1992,17(2)
The specular reflectance of cold-rolled aluminum surface is studied using a fiber optic system. An approximation for the determination of surface roughness is presented. 相似文献
10.