Facility for preparation of gas mixture in muon catalyzed fusion experiments

A facility is described that allows safe handling of high tritium gas activity as dozens kilocuries in a regular laboratory environment. It is used to make and deliver into the target a mixture of specific isotopic composition with the contamination requirement of 10^-7 v.f. for Z>1 elements, and recover it upon completion of operation. With this facility, efforts have been accomplished to investigate into the muon catalyzed fusion on two targets – liquid tritium and high-pressure tritium types. Also, the operation range was 0.1–120 MPa for pressure and 20–800 K for temperature and the amount of tritium used was about 100 kCi. The facility showed reliability in operation without indications of radiation beyond the safety level. This revised version was published online in August 2006 with corrections to the Cover Date.     

Effect of substitution of Ce on superconducting properties of Bi1.7Pb0.3Sr2Ca2−x Ce x Cu3O10+δ system

We have investigated the superconducting properties of the Bi_1.7 Pb_0.3Sr₂Ca_2−xCe _x Cu₃O_10+δ system with x=0.00, 0.02, 0.04, 0.08 and 0.1 by X-ray diffraction and magnetic susceptibility. The substitution of Ce for Ca has been found to drastically change the superconducting properties of the system. X-ray diffraction studies on these compounds indicate decrease in the c-parameter with increased substitution of Ce at Ca site and volume fraction of high T _c (2 : 2 : 2 : 3) phase decreases and low T _c phase increases. The magnetic susceptibility of this compound shows that the diamagnetic on set superconducting transition temperature (onset) varies from 109 K to 51 K for x=0.00, 0.02, 0.04, 0.08 and 0.1. These results suggest the possible existence of Ce in a tetravalent state rather than a trivalent state in this system; that is, Ca²⁺ → Ce⁴⁺ replacement changes the hole carrier concentration. Hole filling is the cause of lowering T _c of the system.     

Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature

We have deposited relatively thick (∼60 nm) Ge layers on Br-passivated Si(111) substrates by thermal evaporation under high vacuum conditions at room temperature. Ge has grown in a layer-plus-island mode although it is different from the Stranski-Krastanov growth mode observed in epitaxial growth. Both the islands and the layer are nanocrystalline. This appears to be a consequence of reduction of surface free energy of the Si(111) substrate by Br-passivation. The size distribution of the Ge nanoislands has been determined. The Br-Si(111) substrates were prepared by a liquid treatment, which may not produce exactly reproducible surfaces. Nevertheless, some basic features of the nanostructural island growth are reasonably reproducible, while there are variations in the details of the island size distribution.     

Extraction-scintillation method for determining the concentration of radioisotopes

A method is presented for the determination of uranium isotopes in waters by the scintillation-extraction method. By extraction with tributyl phosphate (TBP) in toluene as a liquid scintillator it was established that the presence of TBP in the solvent does not affect the photo-yield substantially. The optimum measuring conditions and the sensitivity of the method have been studied.