Some empirical relations for electron mobility in II–VI compound semiconductors

Electron mobility has been calculated in a number of binary II–VI compound semiconductors using a displaced Maxwellian distribution function and taking the various scattering mechanisms into consideration at different lattice temperatures and for various amounts of ionized impurity concentrations. It is observed that the low field mobility values can be expressed by a cubic power relationship with lattice temperature and with ionized impurity concentration using a least mean square fit technique with an accuracy better than 5 per cent. Similarly, the field dependence of mobility can also be expressed as a power series of the applied electric field. It is suggested that these equations can be profitably used for a quick estimation of mobility values as a check on experiments and also as sufficiently accurate formulae for simulation and modelling purposes.     

Multifunctional ToF-SIMS: combinatorial mapping of gradient energy substrates

We present a simple method for chemical modification of chlorosilane self-assembled monolayers (SAMs) on Si surfaces by exposure to a gradient of UV-ozone radiation to create stable substrates with a range of contact angles (θ_H2O≈5–95°) and surface energies on a single substrate. These gradient energy substrates are developed to potentially generate libraries for combinatorial studies of thin film phenomenology, where a systematic variation of interfacial surface energy represents one of the significant parameters along one axis. The graded oxidation process presents a systematic variation of surface chemical composition. We have utilized contact angle measurements and time-of-flight secondary ion mass spectrometry (ToF-SIMS) to investigate this variation for a series of ions, among which are SiCH₃⁺, SiOH⁺ and COOH⁻. We show that the macroscopic measurements of surface free energy/contact angle correlate with the detailed analysis of surface chemistry (as assessed by ToF-SIMS) on these test substrates.     

Effects of saturation on optical bistability with coupled surface plasmons

We present exact numerical results for a symmetric layered medium (prism/Ag film/nonlinear dielectric/Ag film/prism) where the middle dielectric slab is assumed to have a saturation-type nonlinearity. We show bistable behaviour in the power dependence of the reflectivity ofp-polarized light under the condition when coupled surface modes are excited in the structure. Moreover, we study the effect of saturation on the bistable behaviour to show that multivalued character is inhibited by saturation effects. The field distributions corresponding to the minimum reflectivity states of the nonlinear structure are also presented.     

Working group report: Neutrino and astroparticle physics

This is the report of neutrino and astroparticle physics working group at WHEPP-7. Discussions and work on CP violation in long baseline neutrino experiments, ultra high energy neutrinos, supernova neutrinos and water Cerenkov detectors are discussed.     

Does phenazine form triplet excimer and dimer anion radical?

Laser flash photolysis of phenazine (PZ) solution reveals the existence of a stable species with a long lifetime at 380 nm in addition to the usual triplet PZ at 440 nm. The former is suggested to be due to formation of triplet PZ excimer. The triplet excimer also undergoes photoinduced electron transfer with some aromatic amines. The formation of PZ dimer anion radical and amine cation radicals are confirmed by external magnetic field effect studies. Measurement of B_1/2, which estimates hyperfine present in the system, also supports this assignment.     

Oxidation of cyclohexane with molecular oxygen using a Schiff base cobalt complex bonded to carbamate-modified silica gel

The Schiff base [1,2-bis(salicylidene amino)phenylene]cobalt(II) complex, chemically bonded to a carbamate-modified silica gel catalyst, has been prepared by a four step procedure. The oxidation of cyclohexane was studied in the presence of this catalyst under relatively mild conditions (150–200 °C, 15–20 atm) using molecular oxygen. The catalyst was found to be very selective for the production of cyclohexanol, with cyclohexanone formed in only a small amount (45:1). This is in contrast to the commercially available processes in which cyclohexanol and cyclohexanone are both formed in appreciable amounts. The t.g.a. analysis shows the catalyst to be stable up to 211 °C and atomic absorption spectroscopy indicated negligible metal loss during 50 h use of the catalyst up to 180 °C.