Electrical transport and magnetic ordering in R 2Ti3Ge4 (R=Dy, Ho and Er) compounds

New R ₂Ti₃Ge₄ (R=Dy, Ho and Er) intermetallic compounds have been synthesized and characterized by X-ray diffraction and low temperature ac magnetic susceptibility, electrical resistivity and thermoelectric power measurements were carried out. The compounds crystallize in the parent, Sm₅Ge₄-type orthorhombic structure (space group Pnma) and lanthanide contraction is observed as one moves along the rare-earth series. The changeover from paramagnetic to antiferromagnetic phase happens at low temperatures and the ordering temperature scales with the de Gennes factor. The electrical resistivity is metallic with a negative curvature above 100 K. Thermopower displays a weak maximum at temperatures less than 50 K signifying the possible phonon and magnon drag effects.     

Effect of excitation level on the photoluminescence of barium thiogallate activated with europium and cerium ions

The photoluminescence of barium thiogallates doped with Eu²⁺, Ce³⁺, and Eu²⁺ + Ce³⁺ ions is studied over a wide range of excitation levels (10^–3–10⁶ W/cm²). Introduction of 3 at.% Eu and 3 at.% Ce instead of 5 at.% Eu into a BaGa₂S₄ matrix doubles the luminescence quantum yield of the phosphor. Doped BaGa₂S₄ exhibits a high linearity in its luminescence intensity as a function of excitation level (a constant efficiency) up to 2·10⁴ W/cm² for excitation pulse durations of 8 ns, which corresponds to cw pumping at a power density of about 5·10² W/cm² in terms of the concentration of excited ions. It is shown that using BaGa₂S₄:Eu,Ce along with the “yellow” phosphor of a Nichia NS6L083 LED may increase its color rendering index from 0.64 to 0.80 with no reduction in its luminous efficiency.     

Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates

With the aim of establishing the mechanisms for spontaneous recombination and lasing, we have studied InGaN/GaN multiple quantum well heterostructures emitting in the 450 nm region and grown by organometallic vapor-phase epitaxy on silicon substrates using several mechanical stress-reducing AlN/AlGaN inserts. Photoluminescence (PL) excitation spectroscopy, the non-monoexponential nonequilibrium carrier relaxation kinetics, and x-ray diffractometry data indicate significant inhomogeneity of the InGaN solid solution in quantum wells of these structures. The dependences of the position of the photoluminescence spectra on the excitation level and the temperature, the large shift in the photoluminescence, gain, and lasing spectra relative to the absorption edge allow us draw the conclusion that the dominant contribution to spontaneous and stimulated recombination comes from nonequilibrium charge carriers localized in indium-rich InGaN clusters. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 1, pp. 94–101, January–February, 2008.     

Elastic properties of the Ta–V system: bcc Ta0.33V0.67 and C15 TaV2

Resonant ultrasound spectroscopy was used to measure the elastic constants of bcc Ta_0.33V_0.67 over the temperature range 3.5–300?K; the results were compared to earlier measurements on C15 TaV₂. The temperature dependence of the polycrystalline shear modulus is completely different in the two phases; that of the bcc phase decreases with temperature whereas that of the C15 phases increases in an anomalous fashion. This difference is consistent with a model involving doubly-degenerate levels at the X point of the Brillouin zone in the C15 phase with the Fermi level lying near the doubly degenerate level. This model accounted for the unusual behaviour of the C15 phase. Debye temperatures were determined from the ultrasonic measurements: 295?K for the C15 phase and 315?K for the bcc phase.     

Optically pumped InGaN/GaN MQW lift-off lasers grown on silicon substrates

Chemical etching and removal of the silicon substrate was used for the creation of optically pumped lift-off InGaN/GaN multiple quantum well (MQW) lasers from heterostructures grown on silicon substrate by MOVPE. Luminescence and laser properties of these heterostructures on silicon substrates as well as those of MQWs lifted-off from their substrate by chemical etching were investigated. The lowest value of the lasing threshold of the lift-off lasers at room temperature was about 205 kW/cm² for a laser wavelength of 463 nm and about 360 kW/cm² for a wavelength of 475 nm. It was shown theoretically that the reduction of internal losses, caused by the absence of absorption in the substrate (resulting from its removal) is most significant for the high order modes having lower values of mirror losses and can lead to a 50% reduction of the threshold (or material gain in InGaN necessary to achieve the threshold).