Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals

The extrinsic electronic parameters of Tl₂InGaSe₄ layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current–voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of (4.8–7.7) × 10¹⁰ cm^?3. Photoconductivity measurements reveal the existence of another energy level located at 0.16 eV. In the studied temperature range, the photocurrent increases with increasing temperature. The dependence of the photoconductivity on the incident light intensity exhibits a linear recombination character near room temperature and a supralinear character as the temperature decreases. The change in recombination mechanism is attributed to an exchange in the behavior of sensitizing and recombination centres.     

Investigation of carrier scattering mechanisms in TlInS2 single crystals by Hall effect measurements

TlInS₂ single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100‐400 and 170‐400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole‐ and electron‐phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 meV and a set of donor energy levels located at 360, 280, 220 and 170/152 meV are determined from the temperature dependencies of the carrier concentration and conductivity. A hole, electron, hole‐electron pair effective masses of 0.24 m_o, 0.14 m_o and 0.09 m_o and hole‐ and electron‐phonon coupling constants of 0.50 and 0.64, respectively, are obtained from the Hall effect measurements. The theoretical fit of the Hall coefficient reveals a hole to electron mobility ratio of 0.8. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature-dependent capacitance–voltage biasing of the highly tunable TlGaTe2 crystals

The temperature effects on the capacitance–voltage characteristics as well as the room temperature capacitance–frequency characteristics of TlGaTe₂ crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 μF to 60 pF was recorded. The capacitance–voltage characteristics, being recorded in the temperature range of 290–380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values (∼10³) make the TlGaTe₂ crystals applicable in microelectronic components.     

Refractive index,band gap and oscillator parameters of amorphous GaSe thin films

GaSe thin films are obtained by evaporating GaSe crystals onto ultrasonically cleaned glass substrates kept at room temperature under a pressure of ∼10^–5 Torr. The X‐ray analysis revealed that these films are of amorphous nature. The reflectance and transmittance of the films are measured in the incident photon energy range of 1.1–3.0 eV. The absorption coefficient spectral analysis revealed the existence of long and wide band tails of the localized states in the low absorption region. The band tails width is calculated to be 0.42 eV. The analysis of the absorption coefficient in the high absorption region revealed an indirect forbidden band gap of 1.93 eV. The transmittance analysis in the incidence photon wavelength range of 500–1100 nm allowed the determination of refractive index as function of wave length. The refractive index–wavelength variation leads to the determination of dispersion and oscillator energies as 31.23 and 3.90 eV, respectively. The static refractive index and static dielectric constant were also calculated as a result of the later data and found to be 9.0 and 3.0, respectively. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Models for capacitated lot-sizing problem with backlogging,setup carryover and crossover

Setup operations are significant in some production environments. It is mandatory that their production plans consider some features, as setup state conservation across periods through setup carryover and crossover. The modelling of setup crossover allows more flexible decisions and is essential for problems with long setup times. This paper proposes two models for the capacitated lot-sizing problem with backlogging and setup carryover and crossover. The first is in line with other models from the literature, whereas the second considers a disaggregated setup variable, which tracks the starting and completion times of the setup operation. This innovative approach permits a more compact formulation. Computational results show that the proposed models have outperformed other state-of-the-art formulation.     

Stability and convergence of the spectral Lagrange-Galerkin method for mixed periodic/non-periodic convection-dominated diffusion problems

We present a convergence analysis of the spectral Lagrange-Galerkinmethod for mixed periodic/non-periodic convection-diffusionproblems. The scheme is unconditionally stable, independentof the diffusion coefficient, even in the case when numericalquadrature is used. The theoretical predictions are illustratedby a series of numerical experiments. For the periodic case,our results present a significant improvement on those givenby Süli & Ware (1991) SIAM J. Numer.Anal.28, 423-445).     

Cd‐Doping Effects on The Properties of Polycrystalline α‐In2Se3 Thin Films

The X‐ray diffraction has revealed that the polycrystalline hexagonal structured α‐In₂Se₃ thin films grown at substrate temperature of 200 °C with the unit cell parameters a = 4.03 Å and c = 19.23 Å becomes polycrystalline hexagonal structured InSe with a unit cell parameters of a = 4.00 Å and c = 16.63 Å by Cd‐doping. The analysis of the conductivity temperature dependence in the range 300‐40 K revealed that the thermionic emission of charged carriers and the variable range hopping are the predominant conduction mechanism above and below 100 K, respectively. Hall measurements revealed that the mobility is limited by the scattering of charged carriers through the grain boundaries above 200 K and 120 K for the undoped and Cd‐doped samples, respectively. The photocurrent (I_ph) increases with increasing illumination intensity (F) and decreasing temperature up to a maximum temperature of ∼100 K, below which I_ph is temperature invariant. It is found to have the monomolecular and bimolecular recombination characters at low and high illumination intensities, respectively. The Cd‐doping increases the density of trapping states that changes the position of the dark Fermi level leading to the deviation from linearity in the dependence of I_ph on F at low illumination intensities.