Some rules forS(-2k) dipole sums?

Stieltjes conditions and the ratio test provide necessary but not sufficient conditions onS(-2k) dipole sums. If the dipole sums are accurate the associated [n, n –1] Padé approximant provides a better representation of (), the frequency-dependent dipole polarizability, than a truncated series expression and, in addition, should bound () below. It is shown how constraints on the dipole sums effect the form of the [2,1] Padé approximant and an additional constraint is derived that ensures the analyticity of the approximant on 0 < ₁. There then follows a discussion of the reliability of available literature dipole sum values for small molecules containing H, C, N and O.     

Electric polarizabilities,magnetic susceptibilities and dispersion coefficients for hydrocarbons

Using wavefunctions given in the companion paper bond properties and interactions are computed. Results are in agreement with other theoretical estimates and provide good molecular results. Differences between similar bonds can be accounted for by change in bond length. Simple formulae can be used to normalize bond contributions according to bond length. Parameters should be applicable to macromolecules.     

The transition metal dichalcogenides discussion and interpretation of the observed optical,electrical and structural properties

The transition metal dichalcogenides are about 60 in number. Two-thirds of these assume layer structures. Crystals of such materials can be cleaved down to less than 1000 Å and are then transparent in the region of direct band-to-band transitions. The transmission spectra of the family have been correlated group by group with the wide range of electrical and structural data available to yield useful working band models that are in accord with a molecular orbital approach. Several special topics have arisen; these include exciton screening, d-band formation, and the metal/insulator transition; also magnetism and superconductivity in such compounds. High pressure work seems to offer the possibility for testing the recent theory of excitonic insulators.     

Locking in photosensitivity within optical fiber and planar waveguides by ultraviolet preexposure

Strong photosensitivity is locked in permanently after hydrogen outdiffusion of hydrogen-loaded waveguides presensitized with UV light by either pulsed 193-nm or cw 244-nm laser output.     

A phase I, randomized study of combined IL-2 and therapeutic immunisation with antiretroviral therapy

Background  

Fully functional HIV-1-specific CD8 and CD4 effector T-cell responses are vital to the containment of viral activity and disease progression. These responses are lacking in HIV-1-infected patients with progressive disease. We attempted to augment fully functional HIV-1-specific CD8 and CD4 effector T-cell responses in patients with advanced chronic HIV-1 infection.     

Low-dimensional systems: Quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems

This review is concerned with quantum confinement effects in low-dimensional semiconductor systems. The emphasis is on the optical properties, including luminescence, of nanometre-sized microcrystallites, also referred to as zerodimensional systems. There is some discussion on certain of the two-dimensional systems, such as thin films and layer structures. The increase in energy of excitation peaks (blue shift) as the radius R of a microcrystallite is reduced is treated theoretically, and experimental data when they are available are used to assess the reliability of the different models that have been used. These experiments normally make use of microcrystallites dispersed in a large-bandgap matrix such as glass, rocksalt, polymers, zeolites or liquids. Exciton binding energies E b are larger than for bulk semiconductors, and oscillator strengths are higher for the microcrystallites. The regimes of direct interest are as follows. Firstly there is the so-called weak-confinement regime where R is greater than the bulk exciton Bohr radius a B . Experimentally, semiconductors such as CuCl with a B , 7 Å, are suitable for study in this case. Secondly there is the moderate-confinement regime, where R , a B , and a h < R < a e , a h and a e being the hole and electron Bohr radii, respectively. Finally there is the strong-confinement regime, with R < a B , and R < a h , a e . For this case we are concerned with a ladder of discrete energy levels, as in molecular systems, rather than energy bands. The electrons and holes are treated as independent particles, and for excited states we refer to electron-hole pairs rather than excitons. Suitable materials for investigation in this regime are the II-VI semiconductors, and also GaAs and Ge, for which a B is relatively large. Although a number of different theoretical models have been used, none can be described as completely first-principles calculations, and there is room for improvement on this aspect. However, useful expressions have been developed by Brus and by Lippens and Lannoo, giving the energy of excited states as a function of R , in terms of the bulk energy gap, kinetic energy, Coulomb energy and correlation energy. Other phenomena discussed are firstly biexciton formation by the use of high intensity laser beams and secondly nonlinear optical effects. Strong nonlinearities and short decay times for excited states have been predicted, and the models developed cover both the resonant and the non-resonant cases. The possibility of using microcrystallites embedded at reasonable concentrations in a glass matrix in the field of optical communications and optical switching is also considered.     

The band structure and electronic properties of sulphur nitride polymer

A semiempirical calculation of the energy band structure of (SN)_x has been made on a tight-binding model with three p orbitals per atom. An important feature is that the Fermi level crosses two overlapping conduction bands. Measurements are reported of the optical transmission spectrum between 0.2 and 4.0 eV in thin films, the free carrier reflectivity in thick films, and the hydrostatic pressure dependence of the conductivity to 15 kbar. The calculated band structure accounts for experimental results connected with interband transitions (optical absorption) and intraband effects (metallic conductivity, reflectivity, specific heat).     

The electronic and magnetic properties of the 3d transition metal intercalates of TiS2

The introduction of 3d transition metals (M) into the van der Waals gaps between the weakly coupled layers of transition metal dichalcogenides TX₂ (T:transition metal, X:chalcogen) produces an interesting family of intercalation compounds, M _x TX₂, the physical properties of which are different from those of the host TX₂ matrix because of ‘host-guest’ interactions. In this article we shall review the salient features of the M _x TiS₂ family with the simple 1T-CdI₂ type layered structure, which have been extensively studied by structural, transport, specific heat and lattice dynamic, magnetic and photoemission spectroscopic measurements. In contrast with the previously reported series of intercalation complexes of the Group V transition metal dichalcogenides, a characteristic of the M _x TiS₂ materials is strong hybridisation between the guest atom M 3d orbitals and the host Ti 3d and S 3p orbitals, leading to changes in the Fermi energy E _F of the conduction band, the density of states at E _F and various types of magnetic orderings. These properties are understood in terms of an itinerant electron or band picture for the intercalant, rather than a rigid band or localised model.