Dielectric properties of europium-indium oxide solid solution films prepared on Si (100) substrates

Thin Eu-In solid solution oxide films (SS) were grown on Si (P) substrates to form MOS devices. The samples were characterised by X-ray fluorescence and X-ray diffraction techniques. The ac-conductance and capacitance of the devices were studied as a function of frequency in the range 500 Hz to 100 kHz, temperature in the range 293-400 K and gate voltage. The investigation established that: (1) the prepared SS exhibit a sudden reversible structural change at about 370 K, (2) the frequency dependence for f>10 kHz of the ac-conductivity and capacitance of the insulator at room temperature is controlled by the ‘corrected barrier hopping’ CBH model, (3) the temperature dependence of the ac-conductance which shows a small activation energy characterises the hopping process of current carriers between equilibrium sites, and (4) the prepared transparent SS have a sufficiently high relative permittivity ?, around 30, which suggests they are promising candidates for high-? dielectric applications.     

Optical and transport phenomena in CdO:La films prepared by sol-gel method

A series of lightly La-doped CdO thin films (1%, 5%, and 7%) have been prepared by a spin coater sol-gel technique on amorphous glass and crystalline Si substrates. Those prepared films were studied by X-ray diffraction (XRD), UV-VIS-NIR absorption spectroscopy, and dc-electrical measurements. The investigation shows that La doping grows slightly the CdO lattice parameter and decreases the intrinsic energygap from 2.1 eV to 1.7 eV. The optical properties were easily explained in the framework of classical Drude theory and thus all the corresponding parameters were determined. The electrical behaviour of the samples shows that they are degenerate semiconductors until the atomic percentage of the La dopant was 7% then the sample was converted into a non-degenerate semiconductor. Generally, it was observed that the conductivity and mobility of the carriers were decreased by increasing the La content in the CdO film samples.     

Characterisation and ac-electrical investigation of sublimated bis(dimethylglyoximato)palladium(II) thin films

Thin films of bis(dimethylglyoximato)palladium(II) complex of polycrystalline structure were prepared by sublimation in a vacuum at 140 °C, on glass and p-Si substrates. The films were characterised by spectral optical absorption, energy dispersion X-ray fluorescence (EDXRF), and X-ray diffraction (XRD) methods. After characterisation, metal-insulator (complex)-semiconductor MIS devices were fabricated to measure the frequency dependence of ac-conductivity in a range of 5-100 kHz. Data of ac-measurements follow the correlated barrier-hopping CBH model, from which one of the fundamental absorption peaks, the minimum hopping distance, and other parameters of the CBH model were determined, connecting and relating the optical, structural, and electrical measurements. The dielectric properties of the complex were studied through Debye model, from which the relaxation time for the dipoles (2.45 × 10⁻⁶ s) and the molecular dipole moment (3.63 × 10⁻³⁰ C m ) were determined.     

Nonlinear interaction of electron beam with magnetized warm plasma

The nonlinear interaction of electron beam with inhomogeneous semi-bounded collisional magnetized warm plasma under external static magnetic field has been studied. The second-harmonic generation at the beam entrance into the plasma is considered. This process leads to an increase in the amplitude of the electric field in the inhomogeneous region and, in turn, to higher absorption.     

Preparation and characterisation of crystalline tris(acetylacetonato)Fe(III) films grown on p-Si substrate for dielectric applications

Thin tris(acetylacetonato)iron(III) films were prepared by sublimation in vacuum on glass and p-Si substrates. Then comprehensive studies of X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, AC-conductivity, and dielectric permittivity as a function of frequency and temperature have been performed. The prepared films show a polycrystalline of orthorhombic structure. The optical absorption spectrum of the film was identical with that of the bulk powder layer. For electrical measurements of the complex as insulator, sample in form of metal-insulator-semiconductor (MIS) structure was prepared and characterised by the measurement of the capacitance and AC-conductance as a function of gate voltage. From those measurements, the state density D_it at insulator/semiconductor interface and the density of the fixed charges in the complex film were determined. It was found that D_it was of order 10¹⁰ eV⁻¹/cm² and the surface charge density in the insulator film was of order 10¹⁰ cm⁻². The frequency dependence of the electrical conductivity and dielectric properties of MIS structures were studied at room temperature. It was observed that the experimental data follow the correlated barrier-hopping (CBH) model, from which the fundamental absorption edge, the cut off hopping distance, and other parameters of the model were determined. It was found that the capacitance of the complex increases as temperature increases. Generally, the present study shows that the tris(acetylacetonato)iron(III) films grown on p-Si is a promising candidate for low-k dielectric applications, it displays low-k value around 2.0.     

Aspect-ratio dependent oscillatory thermocapillary convection in the floating half zone

The dependency of the critical Marangoni number on the geometrical aspect ratio of the floating half zone is essential to predict the onset of oscillatory thermocapillary convection.The experimental studies in the microgravity conditions on floating half zones of several centimeters in diameter have predicted that the critical Marangoni number increases with the increasing aspect ratio,and the terrestrial experimental studies have predicted the contradictory conclusion for floating half zones of several mil...     

Non-Gravitational Effects with Density-Matching in Evaluating the Influence of Sedimentation on Colloidal Coagulation

The method of density matching between the solid and liquid phases is often adopted to effectively eliminate the effect of sedimentation of suspensions in studies on dynamic behaviour of a colloidal system. However, the associated changes in the solvent composition may bring side effects to the properties investigated and therefore might lead to a faulty conclusion if the relevant correction is not made. To illustrate the importance of this side effect, we present an example of the sedimentation influence on the coagulation rate of suspensions of 2μm （diameter） polystyrene. The liquid mixtures, in the proper proportions of water （H2O）, deuterium oxide （D2O） and methanol （MeOH） as the liquid phase, density-matched and unmatched experiments are performed. Besides the influence of viscosity, the presence of methanol in solvent media, used to enhance the sedimentation effect, causes significant changes （reduction） in rapid coagulation rates compared to that in pure water. Without the relevant corrections for those non-gravitational factors it seems that gravitational sedimentation would retard the coagulation. The magnitude of the contribution from the non-gravitational factor is quantitatively determined, making the relevant correction possible. After necessary the influence of the sedimentation on coagulation rates at corrections for all factors, our experiments show that the initial stage of the coagulation is not observable.