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本文报道了对分子束外延(MBE)生长的In0.25Ga0.75As-GaAs应变层量子阱结构在77K下的压力光荧光(PL)研究的结果。流体静压力从0到50kbar.,给出了In0.25Ga0.75As-GaAs应变层量子阱的Γ谷压力系数,实验观察到了量子阱中能级与势垒GaAs中X谷的能级交叉。通过对其压力行为的分析,给出了In0.25Ga0.75As-GaAs异质结的导带与价带跃变比:Qc=△Ec:△Ev=0.68:0.32。对(InGa)As-GaAs应变量子阱常压下的理论分析与实验符合很好。本文也对Al0.3Ga0.70As-GaAs量子阱进行了讨论。
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Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source 下载免费PDF全文
The incorporation behaviour of arsenic and phosphorus in the GaAsP ternary alloy under phosphorus-rich conditions is studied based on the incorporation coefficient model and the growth diffusion model combined with the alloy composition data obtained by high resolution x-ray diffraction analysis. It is found that As adatoms have longer surface lifetime and longer migration length than those of P adatoms, which leads to an arsenic incorporation efficiency much higher than that of phosphorous. With the increase of arsenic flux, the surface lifetime of arsenic adatoms decreases due to the competition of As adatoms. The detailed analysis and discussion are given here. 相似文献
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Interface Properties of InAs/AlSb Superlattices Characterized by Grazing Incidence X-Ray Reflectivity 下载免费PDF全文
Two kinds of superlattice interfaces of InAs/AlSb superlattices are realized in an optimized interface growth process, where one is AlAs-like and the other is InSb-like grown on a relaxed AlSb buffer layer. The superlattice properties such as interface roughness and layer thickness are studied by grazing incidence x-ray reflectivity. The reflectivity curves are simulated by standard software till the simulation curves match well with the experimental curves. The simulation indicates that AlAs-like interfaces are much rougher than InSb-like interfaces. Grazing incidence x-ray reflectivity is also discussed as a powerful tool to assessing the structure properties of superlattices. 相似文献
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STUDY OF THE FOUR-WAVE MIXING DIFFRACTION EFFICIENCY OF LONGITUDINAL-FIELD MULTIPLE-QUANTUM-WELL PHOTOREFRACTIVE DEVICE GROWN AT LOW TEMPERATURE 下载免费PDF全文
We investigate the relationship between the beam intensity and the four-wave mixing diffraction efficiency of longitudinal-field multiple-quantum-well(LMQW) photorefractive device grown at low temperature. The optimum beam intensity is found. We also explain the different mechanisms of the effect of beam intensity on the diffraction efficiency of the LMQW device and the transverse-field MQW device. Some advice on how to improve the diffraction efficiency is given. 相似文献
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Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation 总被引:1,自引:0,他引:1
This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn+-implanted GaN material were studied by X-ray diffraction, Raman scattering and photolumi-nescence. The results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The magnetic behavior has been characterized by superconducting quantum interference device. The material shows room-temperature ferromagnet-ism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn+-implanted GaN. 相似文献