排序方式: 共有21条查询结果,搜索用时 328 毫秒
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用分子束外延方法在GaAs(100)衬底上生长了Zn1-xMgxSySe1-y四元半导体合金薄膜.用X-射线衍射方法确定了外延层的结构和晶格常数.测量了这些样品在平行和垂直两种不同几何配置下的拉曼散射光谱并对其特性做了研究。从实验上观察到了四类不同的晶格振动模:类ZnSe的TO和LO模以及类ZnS和类MgS的LO模,实验发现:在ZnSe和ZnSSe中加入Mg使得类ZnSe的TO和LO模的振动频率下降;同时,也使类ZnS模的频率随S的增加率减小。 相似文献
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用分子束外延方法在GaAs(100)衬底上生长了Zn1-xMgxSySe1-y四元半导体合金薄膜。用X-射线衍射方法确定了外延层的结构和晶格常数。测量了这些样品在平行和垂直两种不同几何配置下的拉曼散射光谱并对其特性做了研究。从实验上观察到了四类不同的晶格振动模:类ZnSe的TO和LO模拟及类ZnS和类MgS的LO模,实验发现:在ZnSe和ZnSSe中加入Mg使得类ZnSe的TO和LO模的振动频率下降;同时,也使类ZnS模的频率随S的增加率减小。 相似文献
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We have measured the fluctuation in local surface potential of GaN epitaxial films having two different types of nanostrueture, as-grown islands or, etched pits, by Kelvin probe force microscopy. We found that the perimeters of as-grown islands and the internal walls of, etched pits have lower surface potential as compared with the as-grown c-plane. The results show that the crystallographic facets tilted with respect to c-plane have higher work function and are electrically more active than c-surface. 相似文献
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