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Met.(Cu,Ag)-TCNQ有机薄膜的EB CL像 总被引:1,自引:0,他引:1
自从1979年Potember等人首先发现了CuTCNQ有机薄膜具有受电流控制的电开关特性以来[1],有关CuTCNQ及AgTCNQ这些阴离子基过渡金属盐(以下简称为Met.(CU、Ag)-TCNQ)有机薄膜的光存储特性、光电开关特性,以及某些气教特性的研究结果便不断报导出来[2-4],引起人们极大的兴趣.作为很有前途的有机光电功能材料,至今对其电导及光电特性的机理研究仍显得十分薄弱,极大影响了它们进一步向实用器件方向的发展.由于CuTCNQ的晶体参数至今未见报导,我们依据CuTCNQ粉末X射线小角衍射谱对比AgTCNQ相应的粉末X射线衍射数据,… 相似文献
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研究了高能电子束在LB膜及多层膜中的输运特性,用Monte-Carlo技术模拟电子在LB聚甲基丙燃酸甲酯抗蚀层及蒸镀有铬膜的硅衬中的散射轨迹,并讨论了电子束曝光刻蚀应用LB膜作抗蚀层的优越性。 相似文献
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Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures 下载免费PDF全文
Using the measured capacitance--voltage curves and the photocurrent
spectrum obtained from the Ni Schottky contact on a strained
Al_0.3Ga_0.7N/GaN heterostructure, the value of the relative
permittivity of the AlGaN barrier layer was analysed and calculated
by self-consistently solving Schr?dinger's and Poisson's
equations. It is shown that the calculated values of the relative
permittivity are different from those formerly reported, and reverse
biasing the Ni Schottky contact has an influence on the value of the
relative permittivity. As the reverse bias increases from 0 V to
--3~V, the value of the relative permittivity decreases from 7.184
to 7.093. 相似文献
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