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Investigation of fabrication and hetero-epitaxy relationship of CoCrPt thin films grown on CrW underlayer
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This paper reports that longitudinally oriented CoCrPt thin films with Cr85W15 underlayer and CoCr intermediate layer for use of giant magnetoresistance heads were fabricated by magnetron sputtering. Without CoCr intermediate layer, CoCrPt layer deposited directly on Cr85W15 underlayer which has a dominant (200) texture exhibits unexpected (10\bar {1}1) texture. After introducing CoCr intermediate layer, the CoCrPt layer shifts into (11\bar {2}0) texture. This article studies the crystallographic hetero-epitaxy relationship between magnetic layer and underlayer in order to understand the appearance of CoCrPt (10\bar {1}1) texture on (200) textured Cr underlayer and the influence of CoCr intermediate layer on the inducement of CoCrPt (11\bar {2}0) texture. The CoCr intermediate layer plays a crucial role in controlling the microstructure and consequently the magnetic properties of the overlying magnetic layer. 相似文献
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Fe-Al-N films were fabricated by reactive sputtering using a radio-frequency magnetron sputtering system. The effects of Al and N content and annealing temperature on microstructure and magnetic properties were investigated. The Fe-Al-N films, which have good soft magnetic properties, consist of nanocrystalline α-Fe grains and a small amount of other phases in the boundaries of α-Fe grains. The average α-Fe grain size is about 10-15nm. A slight amount of Fe-N and Al-N compounds precipitate in the boundaries of α-Fe grains and suppress their growth. Annealing improves the soft magnetic properties slightly by releasing the residual stress and reducing defects. 相似文献
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Reduction of Ordering Temperature of FePt-Al2O3 Thin Films by N2 Addition During Sputtering
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We investigate the effect of N2 addition during sputtering on the microstructure and magnetic properties of FePt-Al2O3 thin films. The texture of FePt phase in FePt-Al2O3 thin films changes from (111) to a more random orientation by N2 addition during sputtering. The ordering temperature of FePt phase reduces about 100℃ with appropriate N2 partial pressure. A larger coercivity of 6.0 × 10^5 Aim is obtained with N2 partial pressure about 15%. Structural analysis reveals that a small quantity of Fe3N phase forms during sputtering and the release of N atoms during the post annealing induces a large number of vacancies in the films, which benefits to the transformation of FePt phase from fcc to fct. 相似文献
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The Fex Pt 100x (10nm) (x=31-51) thin films are fabricated on Si (100) substrates by using magnetron sputtering. The highly ordered L1 0 FePt phase is obtained after post-annealing at 700℃in Fe 47 Pt 53 thin film. The sample shows good perpendicular anisotropy with a square loop and a linear loop in the out-of-plane and the in-plane direction, respectively. The variations of the magnetic domains are investigated in the films when the content value of Fe changes from 31% to 51%. 相似文献
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FeCoN soft magnetic thin films are prepared by using the reactive direct-current magnetron sputtering technique.It is found that the addition of N2 can reduce the coercivity of the FeCoN film,and excellent soft magnetic properties can be obtained when the ratio of N2 flow to total gas flow is 10%.The influences of texture,grain size,and stress on the magnetic properties and the high-frequency behaviors of the films are also discussed. 相似文献
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射频交替溅射法制备的NiZn铁氧体薄膜的结构与磁性 总被引:1,自引:0,他引:1
使用交替靶射频溅射的方法在不同基底上制备得到了成分为NixZn1-xFe2O4的铁氧体薄膜,研究了NiZn铁氧体薄膜的生长条件,探讨了不同工艺条件对薄膜性能的影响,目的是提高薄膜饱和磁化强度Ms,降低薄膜矫顽力Hc,改善薄膜的软磁性能,以满足其在高频薄膜器件应用方面的需要.实验表明:沉积态薄膜即为尖晶石结构.并且通过不同实验条件对NiZn铁氧体薄膜性能影响的研究,得到了最佳的NiZn铁氧体薄膜的制备条件. 相似文献
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在本次工作中,制备了纳米晶FeAlN和FeTaN薄膜。虽然两种膜都展示了软磁性,但是观察到了不同的单轴各向异性。微结构的测量揭示了Ta的添加导致了N的更高溶解度,并且导致了更大的晶格膨胀和更大的压缩应力。单轴各向异性来源于N原子在a-Fe点阵中的各向异性分布。Al更容易与N发生反应,所以FeAlN膜中的a-Fe比FeTaN中的要纯,并且其应力是张应力。两种薄膜不同的各向异性可以由它们不同的微结构来解释。 相似文献