排序方式: 共有58条查询结果,搜索用时 0 毫秒
1.
2.
石墨烯与金属间的相互作用是石墨烯器件研究中的关键问题之一,其涉及石墨烯器件的电学接触、锂离子电池石墨烯电极、石墨烯金属光学等方面.本文重点研究了不同层数的悬空石墨烯表面金纳米膜退火前后的形貌演化过程,观测到两个重要的现象:1)排除基底影响后的悬空石墨烯层数可以通过金纳米膜的形貌特征进行确认,但其随层数的变化趋势与有基底支撑的石墨烯正好相反;2)退火处理后的悬空石墨烯上的金纳米膜形貌演化过程具有类似水滴在荷叶上的行为.对悬空石墨烯表面金属纳米膜在退火前后的形貌变化规律及其现象背后的物理机理进行了详细的讨论和理论解释. 相似文献
3.
以金镍复合膜作催化剂,在96%的高氢气浓度下实现了碳纳米管的定向生长,并对其生长过 程进行了深入探讨.结果表明,高氢气浓度下碳纳米管生长的实现与本实验所选用的催化剂 ——金镍复合膜有密切关系.催化剂中金的参与,促进了碳在催化剂中的扩散,提高了碳在 催化剂中的活度.与催化剂中没有金的情况相比较,金的参与有利于镍吸收气氛中的碳,从 而使镍更容易达到碳饱和,有利于在高的氢气浓度下实现碳纳米管的定向生长.
关键词:
金镍复合膜
高氢气浓度
原子氢
碳活度 相似文献
4.
5.
Reversal current observed in micro-and submicro-channel flow under non-continuous DC electric field 下载免费PDF全文
In practical applications of biochips and bio-sensors, electrokinetic mechanisms are commonly employed to manipulate and analyze the characteristics of single bio-molecules. To accurately and flexibly control the movement of single molecule within micro-/submicro-fluidic channels, the characteristics of current signals at the initial stage of the flow are systematically studied based on a three-electrode system. The current response of micro-/submicro-fluidic channels filled with different electrolyte solutions in non-continuous external electric field are investigated. It is found, there always exists a current reversal phenomenon, which is an inherent property of the current signals in micro/submicro-fluidics Each solution has an individual critical voltage under which the steady current value is equal to zero The interaction between the steady current and external applied voltage follows an exponential function. All these results can be attributed to the overpotentials of the electric double layer on the electrodes. These results are helpful for the design and fabrication of functional micro/nano-scale fluidic sensors and biochips. 相似文献
6.
This paper studies the electronic transport in an individual helically twisted CdS nanowire rope, on which platinum microleads are attached by focused-ion beam deposition. The current-voltage (I - V) characteristics are nonlinear from 300 down to 60 K. Some step-like structures in the I - V curves and oscillation peaks in the differential conductance (dI/dV - V) curves have been observed even at room temperature. It proposes that the observed behaviour can be attributed to Coulomb-blockade transport in the one-dimensional CdS nanowires with diameters of 6-10 nm. 相似文献
7.
Nb/Al-AlOx/Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al-AlOx/Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with Vm=100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm^2, which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions. 相似文献
8.
Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices 下载免费PDF全文
Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carrier densities or in the ON state,tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carrier densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ~67.3 meV can be extracted from the thermal emission-diffusion theory. 相似文献
9.
10.