Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

The nanocrystal-Si quantum dot （nc-Si QD） floating gate MOS structure is fabricated by using plasma-enhanced chemical vapour deposition （PECVD） and furnace oxidation technology. The capacitance hysteresis in capacitancevoltage （C - V） measurements confirm the charging effect of nc-Si QDs. Asymmetric charging current peaks both for electrons and holes have been observed in current-voltage （I - V） measurements at room temperature for the first time. The characteristic and the origin of these current peaks in this nc-Si QD MOS structure is in- vestigated systematically. Moreover, the charge density （10^-7 C/cm^2） calculated from the charging current peaks in the I - V measurements at different sweep rates shows that each quantum dot is charged by one carrier. The difference of charging threshold voltages between the electrons and holes charging peaks, △VG, can be explained by the quantum confinement effect of the nc-Si dots in size of about 3.5 nm.     

The origin of blue photoluminescence from nc-Si/SiO2 multilayers

Intensive blue photoluminescence （PL） was observed at room temperature from the nanocrystalline-Si/SiO2 （nc-Si/SiO2） multilayers （MLs） obtained by thermal annealing of SiO/SiO2 MLs for the first time. By controlling the size of nc-Si formed in SiO sublayer from 3.5 to 1.5 nm, the PL peak blueshifts from 457 to 411 nm. Combining the analysis of TEM, Raman and absorption measurement, this paper attributes the blue PL to multiple luminescent centres at the interface of nc-Si and SiO2.