束流在270°偏转磁铁系统输运过程中的损失计算

为计算医用加速器中束流经过270°偏转磁铁系统电子损失所造成的辐射剂量问题,将束流传输相应的计算公式和蒙特卡罗抽样方法相结合,在一阶近似条件下计算了电子在偏转系统中的输运过程,分析了不同初始条件对电子输运和电子损失的影响;模拟结果表明能散是产生电子损失的主要因素之一.计算得到了损失电子所处位置、能量和飞行方向等信息,把计算得到的信息作为蒙特卡罗程序的输入源,进一步计算出束流损失所产生的辐射剂量分布,从而能更完善地设计医用加速器照射头的屏蔽.文中给出在电子束初始半径为1mm、散角为5mrad、能散为10%条件下电子损失率为13.5%,损失电子主要是向加速器照射头部上方辐射出去.     

束流在270°偏转磁铁系统输运过程中的损失计算

为计算医用加速器中束流经过270°偏转磁铁系统电子损失所造成的辐射剂量问题, 将束流传输相应的计算公式和蒙特卡罗抽样方法相结合, 在一阶近似条件下计算了电子在偏转系统中的输运过程, 分析了不同初始条件对电子输运和电子损失的影响；模拟结果表明能散是产生电子损失的主要因素之一. 计算得到了损失电子所处位置、能量和飞行方向等信息, 把计算得到的信息作为蒙特卡罗程序的输入源, 进一步计算出束流损失所产生的辐射剂量分布, 从而能更完善地设计医用加速器照射头的屏蔽. 文中给出在电子束初始半径为1mm、散角为5mrad、能散为10%条件下电子损失率为13.5%, 损失电子主要是向加速器照射头部上方辐射出去.     

轫致辐射靶的发射率及角分布分析

计算了不同能量下，几种常用单靶(W,Cu,Ta,Au)的X射线前向发射率和角分布, 从理论分析和蒙特卡罗方法模拟计算两方面分析了产生的X射线发射率及其角分布与靶参数和束流参数的关系, 并与已发表的数据及实验结果比较, 结果一致, 可为设计产生X射线的电子加速器及靶提供参数依据.     

Study on the radiation problem caused by electron beam loss in accelerator tubes

The beam dynamic code PARMELA was used to simulate the transportation process of accelerating electrons in S-band SW linacs with different energies of 2.5, 6 and 20MeV. The results indicated that in the ideal condition, the percentage of electron beam loss was 50% in accelerator tubes. Also we calculated the spectrum, the location and angular distribution of the lost electrons. Calculation performed by Monte Carlo code MCNP demonstrated that the radiation distribution of lost electrons was nearly uniform along the tube axis, the angular distributions of the radiation dose rates of the three tubes were similar, and the highest leaking dose was at the angle of 160° with respect to the axis. The lower the energy of the accelerator, the higher the radiation relative leakage. For the 2.5MeV accelerator, the maximum dose rate reached 5% of the main dose and the one on the head of the electron gun was 1%, both of which did not meet the eligible protection requirement for accelerators. We adopted different shielding designs for different accelerators. The simulated result showed that the shielded radiation leaking dose rates fulfilled the requirement.