Low-Threshold High-Temperature Operation of ～7.4μm Quantum Cascade Lasers

We report low-threshold high-temperature operation of 7.4#m strain-compensated InGaAs/lnAIAs quantum cascade lasers （QCLs）. For an uncoated 22-μm-wide and 2-mm-long laser, the low-threshold current densities, i.e. 0.33kA/cm^2 at 81 K in pulsed mode and 0.64kA/cm^2 at 84K in cw mode, are realized. High-temperature operation of uncoated devices, with a high value of 223K, is achieved in cw mode.     

High-Duty-Cycle Operation of GaAs/AlGaAs Quantum Cascade Laser above Liquid Nitrogen Temperature

We present a detailed study of λ- 9.75 μm GaAs/AlGaAs quantum cascade lasers. For a coated 2-rmm-long and 40-μm-wide laser, an optical power of 85 μ W is observed at 95% duty cycle at 80K. At a moderate driving pulse （1 kHz and 1% duty cycle）,the device presents a peak power more than 20mW even at 120K. At 80K, the fitted result of threshold current densities shows evidence of potential cw operation.     

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60μm respectively, a peak output power more than 500mW is achieved in pulsed mode operation. A low threshold current density Jth = 2.6 kA/cm^2 gives the devices good lasing characteristics. In a drive frequency of i kHz, the laser operates up to 20% duty cycle.     

Low Threshold Current Density Operation of Strain-Compensated Quantum Cascade Laser

We report the low threshold current density operation of strain-compensated In0.64 Ga0.36As/In0.3sAl0.62As quantum cascade lasers emitting near 4.94 μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57kA/cm^2 at 80 K is achieved/or an uncoated 20-μm-wide and 2.5-mm-long laser.     

High-Power Operation of Uncoated Strain-Compensated Quantum Cascade Lasers at 4.8μm

High-power operation of uncoated 22μm-wide quantum cascade lasers （QCLs） emitting at λ～ 4.8μm is reported. The emitting region of the QCL structure consists of a 30-period strain-compensated Ino.68 Gao.32 As/In0.37 Alo.63 As superlattice. For a 4-mm-long laser in pulsed mode, a peak output power is achieved in excess of 2240mW per facet at 81K with a threshold current density of 0.64 kA/cm^2. The effects of varying the cavity lengths from 1 to 4 mm on the performances of the QCLs are analysed in detail and the low waveguide loss of only about 1.4 cm^-1 is extracted.