金属衬底上高质量大面积石墨烯的插层及其机制

石墨烯作为一种新型二维材料,因其优异的性质,在科学和应用领域具有非常重要的意义.而其超高的载流子迁移率、室温量子霍尔效应等,使其在信息器件领域备受关注.如何获得高质量并且与当代硅基工艺兼容的石墨烯功能器件,是未来将石墨烯应用于电子学领域的关键.近年来,研究人员发展了一种在外延石墨烯和金属衬底之间实现硅插层的技术,将金属表面外延石墨烯高质量、大面积的特点与当代硅基工艺结合起来,实现了无需转移且无损地将高质量石墨烯置于半导体之上.通过系统的实验研究并结合理论计算,揭示了插层过程包含四个主要阶段:诱导产生缺陷、异质原子插层、石墨烯自我修复和异质原子扩散成膜,并证实了这一插层机制的普适性.拉曼和角分辨光电子能谱实验结果表明,插层后的石墨烯恢复了本征特性,接近自由状态.此外,还实现了多种单质元素的插层.不同种类的原子形成不同的插层结构,从而构成了多种石墨烯/插层异质结.这为调控石墨烯的性质提供了实验基础,也展现了该插层技术的普适性.     

Structural Transition of Gd2O3：Eu Induced by High Pressure

The structural transition of bulk and uano-size Gd2O3：Eu are studied by high pressure energy disperse x-ray diffraction （XRD） and high pressure photoluminescence. Our results show that in spite of different size of Gd2O3 particles, the cubic structure turns into a possible hexagonal one above 13.4 GPa. When the pressure is released, the sample reverses to the monoclinic structure. No cubic structure presents in the released samples. That is to say, the compression and relaxation of the sample leads to the cubic Gd2O3：Eu then turns into the monoclinic one.     

Coulombic interaction in the colloidal oriented-attachment growth of tetragonal nanorods

In this report, the analytical expression of Coulombic interaction between a spherical nanoparticle and a tetragonal nanorod is derived. To evaluate the Coulombic interaction in the oriented attachment growth of tetragonal nanorods, we analyze the correlation between the Coulombic interaction and the important growth parameters, including： nanoparticle- nanorod separation, aspect ratio of the nanorods, and surface charge density. Our work opens up the opportunity to investi-gate interparticle interactions in the oriented attachment growth of tetragonal nanorods.     

单分散性CdSe纳米晶的合成——成核及其生长过程

 在氩气保护下,用三辛基亚磷酸和油酸分别作为Se和Cd的配位体,在260～300 ℃的十八烯溶液中合成了尺寸可控的CdSe纳米晶。该纳米晶不用进行进一步的提纯和尺寸分离就具有单分散性,其量子尺寸限域效应非常明显——吸收光谱的第一吸收峰峰位随着纳米晶的长大而发生红移;该纳米晶质量很高,具有很强的发光能力,其发射光谱对称的形状和合理的Stokes频移（13 nm）显示,该纳米晶的发光完全出自带隙,没有来自缺陷的发光。此外,实验结果表明,通过改变三辛基亚磷酸的浓度可以调节成核和生长的快慢,从而可以在不同的反应时间得到不同尺寸的单分散性CdSe纳米晶。     

Measuring thermoelectric property of nano-heterostructure

A method of measuring the thermoelectric power of nano-heterostructures based on four-probe scanning tunneling microscopy is presented. The process is composed of the it in-situ fabrication of a tungsten-indium tip, the precise control of the tip-sample contact and the identification of thermoelectric potential. When the temperature of the substrate is elevated, while that of the tip is kept at room temperature, a thermoelectric potential occurs and can be detected by a current-voltage measurement. As an example of its application, the method is demonstrated to be effective to measure the thermoelectric power in several systems. A Seebeck coefficient of tens of μV/K is obtained in graphene epitaxially grown on Ru (0001) substrate and the thermoelectric potential polarity of this system is found to be the reverse of that of bare Ru (0001) substrate.