Selective epitaxial growth of Ge nanodots with ultra-thin porous alumina membrane

We demonstrate that ultra-thin porous alumina membrane （PAM） is suitable for controlling of both size and site of Ge nanodots on Si substrates. Ge nanodots are grown on Si substrates with PAM as a template at different temperatures with molecular beam epitaxy （MBE） method. Ordered Ge nanodot arrays with uniform size and high density are obtained at 400 and 500 ℃. Spatial frequency spectrums transformed from scanning electron microscopy images through fast Fourier transform are utilized to analyze surface morphologies of Ge nanodots. The long-range well-ordered Ge nanodot arrays form a duplication of PAM at 400 ~C while the hexagonal packed Ge nanodot arrays are comolementarv with PAM at 500℃.     

速度进口边界条件对鼓泡床流动影响研究

进口边界条件是影响鼓泡流化床流体动力行为的重要因素之一.本文基于欧拉一欧拉双流体气固两相流模型,对具有中心射流进口的鼓泡流化床进行了数值模拟研究.分别采用脉动和定常进口气体速度边界条件,对鼓泡流化床内气泡的形成、长大、分离,气泡的大小进行了分析和研究.模拟结果与Kuipers等的实验结果进行了比较,研究结果表明考虑进口速度的脉动能够更加合理地预测和分析床内流体动力行为.