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Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions 总被引:1,自引:0,他引:1 下载免费PDF全文
In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide(β-FeSi2) as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices. 相似文献
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Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer 总被引:1,自引:0,他引:1 下载免费PDF全文
A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator.This paper discusses the electric field distribution,spectral response and transient response of the device.Due to utilizing p-SiCGe charge-compensation layer,the responsivity increases nearly two times and breakdown voltage increases 33%.The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time.With an increase of the light power density and wavelength,the rise time and fall time will become shorter and longer,respectively.In terms of carrier lifetime,a compromise should be made between the responsivity and switching speed,the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns. 相似文献
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使用二维器件模拟软件Medici, 对SiC1-xGex/SiC异质结的光电特性进行了模拟.设计了N型重掺杂SiC层的厚度为1 μm, P型轻掺杂SiC1-xGex层厚为0.4 μm, 二者之间形成突变异质结.在反向偏压3 V、光强度为 0.23 W/cm2的条件下, p-n+ SiC0.8Ge0.2/SiC和p-n+ SiC0.7Ge0.3/SiC敏感波长λ分别可以达到0.64 μm和0.7 μm, 光电流分别为7.765×10-7 A/μm和7.438×10-7 A/μm; 为了进一步提高SiC1-xGex/SiC 异质结的光电流, 我们把p-n+两层结构改进为p-i-n三层结构.在同样的偏压、光照条件下, p-i-n SiC0.8Ge0.2/SiC和p-i-n SiC0.7Ge0.3/SiC的光电流分别达到1.6734×10-6 A/μm和1.844×10-6 A/μm. 相似文献
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采用低压热壁化学气相沉积法,在6H-SiC衬底(0001)面上生长了不同温度(1100—1250℃),不同GeH4流量比(6.3%—25%)的SiCGe薄膜样品,研究了SiCGe薄膜的表面形貌、生长特性以及样品中Ge组分含量的变化. 扫描电镜测试结果表明,SiCGe薄膜在低温下倾向于岛状生长模式,随着生长温度提高,岛状生长逐渐过渡到层状生长模式,同时伴有岛形状和密度的变化. X射线光电子能谱测试得出SiCGe样品中的Ge含量约为0.15%—0.62%,在其他参数不变的情况下,样品的G
关键词:
碳化硅
化学气相沉积
反相边界
岛状生长 相似文献
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在对SiC1-xGex三元合金主要特性的研究基础上,利用器件仿真器MEDICI模拟和分析SiCGe/SiC异质结光电二极管的光电特性。计算表明, SiC1-xGex 在Ge组分为0.3时与3C-SiC晶格失配较小,此时的SiCGe/SiC异质结对可见光和近红外光有较好的光谱响应。当P型SiC1-xGex层杂质浓度为1×1015cm-3、厚度1.6μm、x=0.3时,SiC1-xGex /SiC异质结光电二极管对0.52μm可见光有250mA/W左右的响应度,对0.7μm近红外光也有102mA/W左右的响应度。 相似文献
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为了改善GaN HEMT的自热效应,集成高热导率的金刚石衬底有助于增强器件有源区的热量耗散。然而,化学气相淀积(CVD)生长的多晶金刚石(PCD)具有柱状晶粒结构,导致了各向异性的材料热导率,且其热导率值与生长厚度有关。为此,通过建模金刚石生长过程中晶粒尺寸的演变过程,计算了金刚石沿面内和截面方向的热导率。基于该PCD热导率模型,利用计入材料非线性热导率的GaN器件热阻解析模型,计算得到了GaN HEMT沟道温度的波动范围,并分析了其与器件结构(栅长、栅宽、栅间距、衬底厚度)和功耗的依赖关系。最后,通过与有限元(FEM)仿真结果对比,分区域提取了GaN HEMT器件中PCD衬底的有效热导率,分别为260~310 W/(m·K)和1 250~1 450 W/(m·K)。本文的计算为预测金刚石衬底上GaN HEMT器件的沟道温度提供了快速、有效的方法。 相似文献
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电子束照射下电介质/半导体样品的电子束感生电流(electron beam induced current,EBIC)是其电子显微检测的重要手段.结合数值模拟和实验测量,研究了高能电子束辐照下SiO2/Si薄膜的瞬态EBIC特性.基于Rutherford模型和快二次电子模型研究电子的散射过程,基于电流连续性方程计算电荷的输运、俘获和复合过程,获得了电荷分布、EBIC和透射电流瞬态特性以及束能和束流对它们的影响.结果表明,由于电子散射效应,自由电子密度沿入射方向逐渐减小.由于二次电子出射,净电荷密度呈现近表面为正、内部为负的特性,空间电场在表面附近为正而在样品内部为负,导致一些电子输运到基底以及一些出射二次电子返回表面.SiO2与Si界面处俘获电子导致界面附近负电荷密度高于周围区域.随电子束照射样品内部净电荷密度逐渐降低,带电强度减弱.同时,负电荷逐渐向基底输运,EBIC和样品电流逐渐增大,电场强度逐渐减小.由于样品带电强度较弱,表面出射电流和透射电流随照射基本保持恒定.EBIC、透射电流及表面出射电流均随束流呈现近似正比例关系.对于本文SiO2/Si薄膜,透射电流随束能的升高逐渐增大并接近于束流值,EBIC在束能约15 keV时呈现极大值. 相似文献