液晶表面锚定能的温度依赖性研究

通过测量扭曲液晶盒中的液晶分子的实际扭曲角及摩擦方向与液晶分子的界面指向矢之间的方位偏角，用自行建立的液晶方位表面锚定能的测量方法，测定了５ＣＢ液晶与摩擦的聚酰亚胺界面的锚定能及其温度依赖性，并用热力学理论进行了分析．实验结果表明，随着温度的增加液晶的表面锚定能Ｅ_ａ是减小的，从２５.５℃时的５.０×１０^－5Ｊ／ｍ²减小到３５℃时的５.０×１０^－6Ｊ／ｍ²；同时，外推长度ｄ_e随 关键词：     

Novel cell parameter determination of a twisted-nematic liquid crystal display

In this paper a novel method is proposed to determine the cell parameters including the twist angle, optic retardation and rubbing direction of twisted-nematic liquid crystal displays （TNLCD） by rotating the TNLCD. It is a single-wavelength method. Because using subtraction equation of transmittance as curve fitting equation, the influence of the light from environment and the absorption by polarizer, the sample of TNLCD and analyser on the transmittance is eliminated. Accurate results can also be obtained in imperfect darkness. By large numbers of experiments, we found that not only the experimental setup is quite simple and can be easily adopted to be carried out, but also the results are accurate.     

液晶分子预倾角的温度依赖性的研究

液晶分子的预倾角是液晶显示器件的重要参数，本文探讨了温度对平行排列的液晶分子的预倾角的影响，指出了温度的升高，导致液晶分子的预倾角降低，并用分子空间相互作用模型进行了理论分析。     

无序的平行型ECB—LCD的研究

为了改善常规的ECBLCD的显示品质，采用不摩 擦技术制备了无序的平行ECB液晶盒，并研究了盒中液晶的微观织构，分析了它的电光特性和视角特性。无序的平行 ECB液晶盒是多畴的并且 具有不能被人的肉眼所识别的的微观向错的结构，并具有分色性好、视角的整个平面内方位对称等特性。为了克服实际驱动时产生的宏观向错，制备了聚合物稳定 的无序的平行ECB器件，其聚合物形成的网络限定了向错的界限，有效地防止了宏观向错的形成。     

Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi多晶硅 受激准分子激光器结晶 结晶化 界面晶粒生长polycrystalline silicon, excimer laser crystallization,Ni-disilicide, Ni-metal-induced lateral crystallization, two-interface grain growthProject supported by the National High Technology Development Program of China (Grant No 2002AA303250) and by the National Natural Science Foundation of China (Grant No 60576056).9/7/2005 12:00:00 AM3/6/2006 12:00:00 AMPolycrystalline silicon （poly-Si） thin film has been prepared by means of nickel-disilicide （NiSi2） assisted excimer laser crystallization （ELC）. The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon （a-Si） coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy （SEM）, another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization （Ni-MILC） model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.     

聚酰亚胺膜上液晶表面锚定强度的研究

研究了取向剂聚酰亚胺上摩擦强度与液晶的表面锚定强度的关系,分析了液晶的表面锚定强度与液晶分子表面预倾角的关系,并运用空间相互作用模型及表面沟槽理论进行了对比分析,认为液晶分子的表面排列机理主要是聚合物与液晶分子的空间相互作用力。 关键词：