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以天冬氨酸热缩聚得到的聚琥珀酰亚胺(PSI)为原料,与乙醇胺通过氨解开环反应,合成了聚天冬氨酸的接枝衍生物α,β-聚(N-2-羟乙基)-L-天冬酰胺(PHEA)。用红外光谱表征了产物的结构;用凝胶色谱测定了分子量分布。研究了PHEA用量、pH值和金属离子初始浓度等对Pb2+和Cu2+去除率的影响,在pH=5.0时,Pb2+的最大去除率为92.48%;在pH=4.5时,Cu2+的最大去除率为89.34%。Pb2+和Cu2+最大静态螯合量分别为25.64mg/g和17.68mg/g。通过XPS分析得知,PHEA与Pb2+螯合时,氮原子和氧原子参与了反应;与Cu2+螯合时,主要是氧原子参与反应。 相似文献
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在室温下制备了立方体{100}、 四面体{111}、 菱形十二面体{110}和块体Ag3PO4微晶, 并进行了表征. 测定了其在不同温度下水溶液中的电导率, 结合强电解质溶液和溶解热力学理论, 得到了Ag3PO4微晶的溶解热力学函数. 以具有不同晶面的Ag3PO4微晶为模型, 研究了纳米材料溶解热力学函数的晶面效应和温度效应. 结果表明, 具有{110}晶面的菱形十二面体Ag3PO4的标准摩尔溶解吉布斯自由能()、 标准摩尔溶解焓()和标准摩尔溶解熵()最大, 具有{100}晶面的立方体Ag3PO4次之, 具有{111}晶面的四面体Ag3PO4最小; 溶解平衡常数( )和随着温度的升高而增大. 相似文献
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Groove-type channel enhancement-mode Al GaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures 下载免费PDF全文
A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor(GTCE-HEMT)with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 m S/mm, and subthreshold slope of 85 m V/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage(VB) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode(D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. 相似文献
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Semiconductor quantum dots are promising hosts for qubits to build a quantum processor. In the last twenty years, intensive researches have been carried out and diverse kinds of qubits based on different types of semiconductor quantum dots were developed. Recent advances prove high fidelity single and two qubit gates, and even prototype quantum algorithms.These breakthroughs motivate further research on realizing a fault tolerant quantum computer. In this paper we review the main principles of various semiconductor quantum dot based qubits and the latest associated experimental results. Finally the future trends of those qubits will be discussed. 相似文献
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本文通过分析Bagging算法在混合适应性样条估计中的作用,提出了一种新的空间适应性非参数函数估计算法.模拟研究表明该算法在空间适应性上具有明显优势,在估计精度和稳定性方面也可与其他同类方法相媲美,并且易于推广到多元情形. 相似文献
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An approach based on depth-sensitive skew-angle x-ray diffraction (SAXRD) is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that (103) plane and (101) plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive (103)/(101) ω-scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach. 相似文献
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目的 研究HBsAg 对脂多糖诱导树突状细胞(DCs)分泌IL-6 和IL-12 的影响。方法 采用重组人粒- 单核
集落刺激因子(rhGM-CSF)联合重组人白细胞介素4(rhIL-4)诱导单个核细胞得到未成熟树突状细胞(iDCs),分别加入HBsAg1、2、5μg/ml,并设对照组,各组再加入脂多糖诱导为成熟DCs。采用流式细胞术鉴定各组iDCs 的表型(CD11c、HLA-DR),ELISA 法检测脂多糖诱导后培养上清液中IL-6 和IL-12 的水平。结果 iDCs 的CD11c/ HLA-DR 双阳性率为(83.62±6.89)%,显著高于单纯培养组(20.57±11.19)%,差异有统计学意义(P<0.05)。HBsAg 1、2、5μg/ml 组培养上清液中IL-6 分别为(609.36±127.06)、(566.01±173.46)、(295.03±76.08)pg/ml,低于对照组(1356.97±181.78)pg/ml(均P<0.05);HBsAg2、5滋g/ml 组IL-12 分别为(854.49±67.92)、(472.09±55.70)pg/ml,低于对照组(1248.78±112.09)pg/ml(均P<0.05);1滋g/ml
组IL-12(1103.53±134.15)pg/ml,与对照组比较差异无统计学意义(P>0.05)。结论 低浓度HBsAg 可下调脂多糖诱导的DCs 细胞因子分泌。 相似文献
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为研究岩石在压剪荷载作用下的断裂特性,在岩石试样侧边切斜裂缝,预制角度分别为30°、45°、60°的初始裂纹,利用TAW-2000微机控制电液伺服岩石三轴试验机进行单轴压缩断裂试验。试验结果表明:边切斜裂缝岩石单轴压缩试样表现为明显脆性,其峰值荷载随初始裂纹角度的增大而增大,大角度初始裂纹具有更高的安全性;试样从预制裂纹尖端开始起裂,并产生向荷载作用方向扩展的翼型裂纹或反翼裂纹,缝尖裂纹扩展初期先受到压剪应力作用,随着裂纹逐渐扩展过程转变为拉应力作用,试样的最终破坏由张拉裂纹主导破坏,初始裂纹角度为45°、60°时伴随部分剪切破坏;裂纹起裂角度随初始裂纹角度的增大而呈现增大趋势,且在初始裂纹角度为60°时,同时出现了反翼裂纹与翼裂纹,起裂模式及角度的控制因素为沿扩展路径方向上法向应力值的相对大小。 相似文献
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