AlGaInP/GaAs HBT制备中质子注入隔离

对HBT工艺中质子隔离注入及其掩膜方法进行了研究.通过计算确定了最佳注入剂量.在一定的温度下退火,可增强隔离效果,最佳退火温度依赖于离子注入剂量,当温度增高时,电阻率又开始下降,并趋向恢复到退火前的状态.采用Si3N4加光刻胶双层掩膜,工艺简单,重复性好,样品无沾污现象,隔离效果佳,制备的器件直流特性较好. 关键词：     

高线性度Al_xGa_(1-x)N/Al_yGa_(1-y)N/GaN高电子迁移率晶体管优化设计

对新型复合沟道AlxGa1-xN/AlyGa1-yN/GaN高电子迁移率晶体管(HEMT)进行了优化设计.从半导体能带理论与量子阱理论出发,自洽求解了器件层结构参数对器件导带能级以及二维电子气(2DEG)中载流子浓度和横向电场的影响.用TCAD软件仿真得到了器件的层结构参数对器件性能的影响.结合理论分析和仿真结果确定了器件的最佳外延层结构Al0.31Ga0.69N/Al0.04Ga0.96N/GaNHEMT.对栅长1μm,栅宽100μm的器件仿真表明,器件的最大跨导为300mS/mm,且在栅极电压-2—1V的宽范围内跨导变化很小,表明器件具有较好的线性度;器件的最大电流密度为1300mA/mm,特征频率为11.5GHz,最大振荡频率为32.5GHz.     

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor(HEMT) with an artificial neural network(ANN).The AlGaN/GaN HEMT device structure and its fabrication process are described.The circuit-based Neuro-space mapping(neuro-SM) technique is studied in detail.The EEHEMT model is implemented according to the measurement results of the designed device,which serves as a coarse model.An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model.Its optimization is performed.The simulation results from the model are compared with the measurement results.It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model.     

A review on the design of ternary logic circuits

A multi-valued logic system is a promising alternative to traditional binary logic because it can reduce the complexity, power consumption, and area of circuit implementation. This article briefly summarizes the development of ternary logic and its advantages in digital logic circuits. The schemes, characteristics, and application of ternary logic circuits based on CMOS, CNTFET, memristor, and other devices and processes are reviewed in this paper, providing some reference for the further research and development of ternary logic circuits.     

深能级对AlGaInP/GaAs异质结双极晶体管性能的影响

用深能级瞬态光谱和光致发光(PL)方法研究了AlGaInP/GaAs异质结双极晶体管(HBT)发射区AlGaInP中的深能级.得到了两个深能级,分别为E_c-E_t1＝0.42eV和E_c-E_t2＝0.59eV,其复合截面为σ_n1＝6.27×10^-17cm²和σ_n2＝6.49×10^-20cm². 关键词：     

MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.[第一段]     

GaInP/GaAs异质结双极晶体管小信号模型参数提取的新方法

提出了一种直接提取GaInP/GaAs异质结双极晶体管(HBT)小信号模型参数的新方法.该方法基 于HBT器件S参数的测试数据，对HBT的小信号模型进行电路网络分析，利用S，Z，Y参数关系 以及电路“抽出”的技巧，分别对HBT小信号模型的寄生参数和本征元件参数进行提取，建 立了一套完整的直接提取HBT小信号模型参数的新方法.与文献报道HBT小信号模型参数提取 的方法相比，该方法的优点是，提取过程具有简明清晰的物理意义，无需建立特殊的测试结 构，无需引入繁琐的数学优化过程，提取速度快，并且具有比较好的精度和较宽频带范围的 适用性等. 关键词： GaInP/GaAs HBT 参数提取 小信号模型