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Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n~+-layer 下载免费PDF全文
A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n +-layer silicon-on-insulator (PBN SOI) is proposed in this paper.Based on the proposed expressions of the vertical interface electric field,the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I),resulting in a high breakdown voltage (BV) for the device.For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 μm),the E I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI,respectively. 相似文献
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Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer 下载免费PDF全文
A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n+-layer silicon-on-insulator (PBN SOI) is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (EI), resulting in a high breakdown voltage (BV) for the device. For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 upmum), the EI and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively. 相似文献
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昆明市区400名学前儿童发铅锌测定及其相关分析 总被引:3,自引:1,他引:2
为了解学前儿童头发中铅锌含量及两元素间的关系,采用火焰原子吸收分光光度法对昆明市三所幼儿园400名学前儿童进行了发中铅锌含量测定。结果表明,发铅≥10*10^-6者232入,占58%;发锌≤100*10^-6者240人,占60%铅锌两元素呈负相关。 相似文献
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应用分光光度计测量Te/TeO2-SiO2复合薄膜的透射光谱和吸收光谱, 在480nm附近观察到Te颗粒引起的等离子体共振吸收峰; 采用Z扫描技术研究了共振(激发波长为532 nm)和非共振情况下(激发波长1064 nm) 不同电位制备薄膜的Te颗粒状态与复合薄膜的三阶非线性极化率的关系. 基于有效介质理论对复合薄膜的三阶非线性效应进行分析, 研究Te颗粒大小对Te/TeO2-SiO2复合薄膜的非线性光学性质的影响及其产生机理. 结果表明薄膜制备过电位增大, Te的粒径减小, 颗粒数量多, 颗粒分布趋于均匀, 使得金属颗粒的表面等离子体共振峰红移, 吸收强度增强, 导致三阶非线性光学效应增强, χ(3)由1064 nm的5.12×10-7 esu增大为532 nm的8.11×10-7 esu.
关键词:
碲
二氧化碲
复合薄膜
三阶非线性 相似文献
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